Power Transistors
2SC3981, 2SC3981A
Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed switching
Unit: mm
s Features
q q q q
0.7
q
16.2±0.5 12.5 3.5 Solder Dip
High-speed switching High collector to base voltage VCBO Wide area of safe operation (ASO) Satisfactory linearity of foward current transfer ratio hFE Full-pack package which can be installed to the heat sink with one screw (TC=25˚C)
Ratings 900 1000 900 1000 800 7 10 5 3 80 3 150 –55 to +150 Unit V
15.0±0.3 11.0±0.2
5.0±0.2 3.2
21.0±0.5 15.0±0.2
φ3.2±0.1
2.0±0.2
2.0±0.1 0.6±0.2
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to 2SC3981 2SC3981A 2SC3981 VCES VCEO VEBO ICP IC IB Ta=25°C PC Tj Tstg Symbol VCBO
1.1±0.1 5.45±0.3 10.9±0.5 1 2 3
emitter voltage 2SC3981A Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power TC=25°C dissipation Junction temperature Storage temperature
V V V A A A W ˚C ˚C
1:Base 2:Collector 3:Emitter TOP–3 Full Pack Package(a)
s Electrical Characteristics
Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time 2SC3981 2SC3981A
(TC=25˚C)
Symbol ICBO IEBO VCEO hFE1 hFE2 VCE(sat) VBE(sat) fT ton tstg tf Conditions VCB = 900V, IE = 0 VCB = 1000V, IE = 0 VEB = 7V, IC = 0 IC = 10mA, IB = 0 VCE = 5V, IC = 0.1A VCE = 5V, IC = 3A IC = 3A, IB = 0.6A IC = 3A, IB = 0.6A VCE = 5V, IC = 0.5A, f = 1MHz IC = 3A, IB1 = 0.6A, IB2 = –1.2A, VCC = 250V 15 0.7 2.5 0.3 800 8 6 1.5 1.5 V V MHz µs µs µs min typ max 50 50 50 Unit µA µA V
1
Power Transistors
PC — Ta
120 12 (1) TC=Ta (2) With a 100 × 100 × 2mm Al heat sink (3) Without heat sink (PC=3W) (1) 60 TC=25˚C 10
2SC3981, 2SC3981A
IC — VCE
Collector to emitter saturation voltage VCE(sat) (V)
100 IC/IB=5 30 10 3 1 –25˚C 0.3 0.1 0.03 0.01 0.01 0.03 TC=100˚C
VCE(sat) — IC
Collector power dissipation PC (W)
100
Collector current IC (A)
80
8
IB=1A 0.8A
6 0.5A 4 0.4A 0.3A 0.2A 2 0.1A
40
20
(2) (3)
25˚C
0 0 20 40 60 80 100 120 140 160
0 0 2 4 6 8 10 12
0.1
0.3
1
3
10
Ambient temperature Ta (˚C)
Collector to emitter voltage VCE (V)
Collector current IC (A)
VBE(sat) — IC
100
hFE — IC
IC/IB=5 1000 VCE=5V 100
fT — IC
VCE=5V f=1MHz TC=25˚C
Base to emitter saturation voltage VBE(sat) (V)
Forward current transfer ratio hFE
30
300
Transition frequency fT (MHz)
1 3 10
30
10
100 25˚C 30 TC=100˚C
10
3
3
1
TC=–25˚C 100˚C 25˚C
10
–25˚C
1
0.3
3
0.3
0.1 0.01 0.03
0.1
0.3
1
3
10
1 0.01 0.03
0.1
0.3
0.1 0.01 0.03
0.1
0.3
1
3
10
Collector current IC (A)
Collector current IC (A)
Collector current IC (A)
Cob — VCB
1000 100 IE=0 f=1MHz TC=25˚C 30
ton, tstg, tf — IC
Pulsed tw=1ms Duty cycle=1% IC/IB=5 (2IB1=–IB2) VCC=200V TC=25˚C tstg
Area of safe operation (ASO)
100 30 Non repetitive pulse TC=25˚C ICP IC 0.5ms 1ms 10ms DC t=0.1ms
Collector output capacitance Cob (pF)
Switching time ton,tstg,tf (µs)
300
Collector current IC (A)
8
10 3 1 0.3 0.1 0.03 tf
10 3 1 0.3 0.1 0.03 0.01
100
30
10
ton
3
1 1 3 10 30 100
0.01 0 1 2 3 4 5 6 7
1
3
10
30
100
300
1000
Collector to base voltage VCB (V)
Collector current IC (A)
Collector to emitter voltage VCE (V)
2
Power Transistors
Area of safe operation, reverse bias ASO
16 14 Lcoil=100µH IC/IB=5 (IB1=–IB2) TC=25˚C
2SC3981, 2SC3981A
Reverse bias ASO measuring circuit
L coil IB1 T.U.T IC
Collector current IC (A)
12 10 8 6 4 2 0 0
2SC3981A 2SC3981
ICP
Vin
–IB2
VCC
IC
tW
Vclamp
200 400 600 800 1000 1200 1400 1600
Collector to emitter voltage VCE (V)
Rth(t) — t
10000 Note: Rth was measured at Ta=25˚C and under natural convection. (1) PT=10V × 0.3A (3W) and without heat sink (2) PT=10V × 1.0A (10W) and with a 100 × 100 × 2mm Al heat sink
Thermal resistance Rth(t) (˚C/W)
1000
100 (1) 10 (2)
1
0.1 10–4
10–3
10–2
10–1
1
10
102
103
104
Time t (s)
3
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