2SC4208A

Transistor 2SC4208, 2SC4208A Silicon NPN epitaxial planer type For low-frequency output amplification and driver amplification Complementary to 2SA1619 and 2SA1619A 5.0±0.2 4.0±0.2 Unit: mm q q q Low collector to emitter saturation voltage VCE(sat). Output of 1W is obtained with a complementary pair with 2SA1619 and 2SA1619A. Allowing supply with the radial taping. (Ta=25˚C) Ratings 30 60 25 50 7 1 500 1 150 –55 ~ +150 Unit V 1.27 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SC4208 2SC4208A 2SC4208 VCEO VEBO ICP IC PC Tj Tstg Symbol VCBO 0.45 –0.1 1.27 +0.15 13.5±0.5 0.7±0.1 0.7±0.2 8.0±0.2 s Features 0.45 –0.1 +0.15 emitter voltage 2SC4208A Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature V V A mA W ˚C ˚C 123 2.54±0.15 2.3±0.2 1:Emitter 2:Collector 3:Base TO–92NL Package s Electrical Characteristics Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage 2SC4208 2SC4208A 2SC4208 2SC4208A (Ta=25˚C) Symbol ICBO VCBO VCEO VEBO hFE1*1 hFE2 VCE(sat) VBE(sat) fT Cob Conditions VCB = 20V, IE = 0 IC = 10µA, IE = 0 IC = 10mA, IB = 0 IE = 10µA, IC = 0 VCE = 10V, IC = 150mA*2 VCE = 10V, IB = 500mA*2 IC = 300mA, IB = 30mA IC = 300mA, IB = 30mA VCB = 10V, IE = –50mA, f = 200MHz VCB = 10V, IE = 0, f = 1MHz 30 60 25 50 7 85 40 0.35 1.1 150 6 *2 min typ max 0.1 Unit µA V V V 340 Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Collector output capacitance *1h 0.6 1.5 V V MHz 15 pF Pulse measurement FE1 Rank classification Q 85 ~ 170 R 120 ~ 240 S 170 ~ 340 Rank hFE1 1 Transistor PC — Ta 1.2 800 700 1.0 2SC4208, 2SC4208A IC — VCE Ta=25˚C 800 VCE=10V Ta=25˚C 700 IC — I B Collector power dissipation PC (W) Collector current IC (mA) 600 500 400 300 200 100 Collector current IC (mA) 20 0.8 IB=10mA 9mA 8mA 7mA 6mA 5mA 4mA 3mA 2mA 1mA 600 500 400 300 200 100 0 0.6 0.4 0.2 0 0 20 40 60 80 100 120 140 160 0 0 4 8 12 16 0 2 4 6 8 10 Ambient temperature Ta (˚C) Collector to emitter voltage VCE (V) Base current IB (mA) VCE(sat) — IC Collector to emitter saturation voltage VCE(sat) (V) 100 30 10 3 1 Ta=75˚C 0.3 0.1 0.03 0.01 0.01 0.03 25˚C –25˚C VBE(sat) — IC Base to emitter saturation voltage VBE(sat) (V) IC/IB=10 100 30 10 3 25˚C 1 –25˚C 0.3 0.1 0.03 0.01 0.01 0.03 Ta=75˚C IC/IB=10 300 hFE — IC VCE=10V Forward current transfer ratio hFE 250 Ta=75˚C 200 25˚C –25˚C 150 100 50 0.1 0.3 1 3 10 0.1 0.3 1 3 10 0 0.01 0.03 0.1 0.3 1 3 10 Collector current IC (A) Collector current IC (A) Collector current IC (A) fT — IE 240 12 Cob — VCB Collector output capacitance Cob (pF) Collector to emitter voltage VCER (V) VCB=10V Ta=25˚C IE=0 f=1MHz Ta=25˚C 120 VCER — RBE IC=2mA Ta=25˚C 100 Transition frequency fT (MHz) 200 10 160 8 80 120 6 60 2SA4208A 40 2SA4208 20 80 4 40 2 0 –1 0 –3 –10 –30 –100 1 3 10 30 100 0 1 3 10 30 100 300 1000 Emitter current IE (mA) Collector to base voltage VCB (V) Base to emitter resistance RBE (kΩ) 2 Transistor ICEO — Ta 104 VCE=10V 2SC4208, 2SC4208A Area of safe operation (ASO) 10 3 Single pulse Ta=25˚C 103 Collector current IC (A) 1 0.3 0.1 0.03 0.01 0.003 ICP IC t=1s DC t=10ms ICEO (Ta) ICEO (Ta=25˚C) 102 10 1 0 40 80 120 160 200 0.001 0.1 0.3 1 3 10 2SC4208 2SC4208A 30 100 Ambient temperature Ta (˚C) Collector to emitter voltage VCE (V) 3