2SC4391

Transistor 2SC4391 Silicon NPN epitaxial planer type For low-frequency output amplification Complementary to 2SA1674 6.9±0.1 0.15 Unit: mm 1.05 ±0.05 2.5±0.1 (1.45) 0.8 0.5 4.5±0.1 0.45–0.05 2.5±0.1 0.7 4.0 s Features q q q s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature * (Ta=25˚C) Ratings 80 80 5 1.5 1 1 150 –55 ~ +150 1cm2 Unit V V V A A W ˚C ˚C 0.45–0.05 +0.1 +0.1 2.5±0.5 2.5±0.5 2 3 Symbol VCBO VCEO VEBO ICP IC PC* Tj Tstg 1 Note: In addition to the lead type shown in the upper figure, the type as shown in the lower figure is also available. 1:Emitter 2:Collector 3:Base MT2 Type Package Printed circuit board: Copper foil area of thickness of 1.7mm for the collector portion or more, and the board 1.2±0.1 0.65 max. 0.45+0.1 – 0.05 (HW type) s Electrical Characteristics (Ta=25˚C) Parameter Symbol ICBO VCBO VCEO VEBO hFE1*1 hFE2 VCE(sat) VBE(sat) fT Cob Conditions VCB = 40V, IE = 0 IC = 10µA, IE = 0 IC = 1mA, IB = 0 IE = 10µA, IC = 0 VCE = 2V, IC = 100mA VCE = 2V, IC = 500mA*2 IC = 500mA, IB = 50mA*2 IC = 500mA, IB = 50mA*2 VCB = 10V, IE = –50mA, f = 200MHz VCB = 10V, IE = 0, f = 1MHz 80 80 5 120 60 0.15 0.85 120 10 *2 min typ max 0.1 14.5±0.5 Low collector to emitter saturation voltage VCE(sat). High collector to emitter voltage VCEO. Allowing supply with the radial taping. 0.65 max. 1.0 1.0 0.2 Unit µA V V V Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Collector output capacitance 340 0.3 1.2 V V MHz 20 pF Pulse measurement *1h FE1 Rank classification R 120 ~ 240 S 170 ~ 340 Rank hFE1 1 Transistor PC — Ta 1.2 1.2 Printed circut board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion. 2SC4391 IC — VCE Collector to emitter saturation voltage VCE(sat) (V) 10 3 1 Ta=75˚C 0.3 0.1 0.03 0.01 0.003 0.001 0.01 0.03 25˚C –25˚C VCE(sat) — IC IC/IB=10 Collector power dissipation PC (W) 1.0 1.0 Collector current IC (A) 0.8 0.8 IB=8mA 0.6 0.6 7mA 6mA 5mA 4mA 3mA 0.4 0.4 2mA 0.2 0.2 1mA 0 0 20 40 60 80 100 120 140 160 0 0 2 4 6 8 10 0.1 0.3 1 3 10 Ambient temperature Ta (˚C) Collector to emitter voltage VCE (V) Collector current IC (A) VBE(sat) — IC 10 hFE — IC IC/IB=10 500 VCE=2V 200 fT — I E VCB=10V Ta=25˚C Base to emitter saturation voltage VBE(sat) (V) 400 Transition frequency fT (MHz) 0.3 1 3 10 3 1 0.3 25˚C Ta=–25˚C 0.1 100˚C 0.03 0.01 0.003 0.001 0.01 0.03 Forward current transfer ratio hFE 160 300 120 Ta=100˚C 200 25˚C –25˚C 100 80 40 0.1 0.3 1 3 10 0 0.01 0.03 0.1 0 –1 –3 –10 –30 –100 –300 –1000 Collector current IC (A) Collector current IC (A) Emitter current IE (mA) Cob — VCB 60 Collector output capacitance Cob (pF) 50 IE=0 f=1MHz Ta=25˚C 40 30 20 10 0 1 3 10 30 100 Collector to base voltage VCB (V) 2