2SC4543

Transistor 2SC4543 Silicon NPN epitaxial planer type For video amplifier Unit: mm s Features 2.6±0.1 4.5±0.1 1.6±0.2 1.5±0.1 q q q 45° 1.0–0.2 +0.1 0.4±0.08 4.0–0.20 High transition frequency fT. Small collector output capacitance Cob. Wide current range. 0.4max. s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature *1 *2 (Ta=25˚C) Ratings 110 100 50 3.5 300 150 1.0 150 –55 ~ +150 Unit V V V V mA mA W ˚C ˚C 0.5±0.08 1.5±0.1 3.0±0.15 3 2 1 0.4±0.04 Symbol VCBO VCER*1 VCEO VEBO ICP IC PC*2 Tj Tstg marking 1:Base 2:Collector 3:Emitter EIAJ:SC–62 Mini Power Type Package Marking symbol : 1F REB = 1.2kΩ Printed circuit board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion s Electrical Characteristics Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Collector output capacitance (Ta=25˚C) Symbol ICEO VCBO VCER VCEO VEBO hFE VCE(sat) fT1 fT2 Cob Conditions VCE = 35V, IB = 0 IC = 100µA, IE = 0 IC = 500µA, RBE = 470Ω IC = 1mA, IB = 0 IE = 100µA, IC = 0 VCE = 5V, IC = 100mA* IC = 150mA, IB = 15mA* VCB = 10V, IE = –10mA, f = 200MHz VCB = 10V, IE = –110mA*, f = 200MHz VCB = 30V, IE = 0, f = 1MHz 300 350 3 * min typ max 10 110 100 50 3.5 20 0.5 2.5±0.1 +0.25 Unit µA V V V V V MHz MHz pF Pulse measurement 1 Transistor PC — Ta 1.6 240 Printed circut board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion. Ta=25˚C 200 100 2SC4543 IC — VCE 120 VCE=5V 25˚C Ta=75˚C 80 –25˚C IC — VBE Collector power dissipation PC (W) 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 20 Collector current IC (mA) 4.5mA 160 4.0mA 3.5mA 120 3.0mA 2.5mA 80 2.0mA 1.5mA 40 1.0mA 0.5mA 0 Collector current IC (mA) IB=5.0mA 60 40 20 0 0 2 4 6 8 10 12 0 0.2 0.4 0.6 0.8 1.0 40 60 80 100 120 140 160 Ambient temperature Ta (˚C) Collector to emitter voltage VCE (V) Base to emitter voltage VBE (V) VCE(sat) — IC Collector to emitter saturation voltage VCE(sat) (V) 100 30 10 3 1 Ta=75˚C 0.3 0.1 0.03 0.01 1 3 10 30 100 300 1000 25˚C –25˚C IC/IB=10 120 hFE — IC 600 VCE=5V fT — I E VCB=10V Ta=25˚C Forward current transfer ratio hFE 100 Transition frequency fT (MHz) 30 100 500 80 400 60 Ta=75˚C 25˚C –25˚C 300 40 200 20 100 0 0.1 0.3 1 3 10 0 –1 –3 –10 –30 –100 –300 –1000 Collector current IC (mA) Collector current IC (mA) Emitter current IE (mA) Cob — VCB 6 Collector output capacitance Cob (pF) 5 IE=0 f=1MHz Ta=25˚C 4 3 2 1 0 1 3 10 30 100 Collector to base voltage VCB (V) 2