2SC4755

Transistor 2SC4755 Silicon NPN epitaxial planer type For high speed switching Unit: mm 2.1±0.1 s Features q q q 0.425 1.25±0.1 0.425 High-speed switching. Low collector to emitter saturation voltage VCE(sat). S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. 0.65 1 2.0±0.2 1.3±0.1 0.65 3 2 0.9±0.1 Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCES VEBO ICP IC PC Tj Tstg Ratings 25 20 5 300 200 150 150 –55 ~ +150 Unit V V V mA mA mW ˚C ˚C 0.7±0.1 0 to 0.1 0.2±0.1 1:Base 2:Emitter 3:Collector EIAJ:SC–70 S–Mini Type Package Marking symbol : DV s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Collector output capacitance Turn-on time Turn-off time Storage time (Ta=25˚C) Symbol ICBO IEBO hFE * Conditions VCB = 10V, IE = 0 VEB = 4V, IC = 0 VCE = 1V, IC = 10mA IC = 10mA, IB = 1mA IC = 10mA, IB = 1mA VCB = 10V, IE = –10mA, f = 200MHz VCB = 10V, IE = 0, f = 1MHz Refer to the measurment circuit min typ max 0.1 0.1 0.15–0.05 +0.1 s Absolute Maximum Ratings (Ta=25˚C) 0.2 0.3–0 +0.1 Unit µA µA 40 0.17 0.76 200 500 2 17 15 7 200 0.25 1.0 V V MHz 4 pF ns ns ns VCE(sat) VBE(sat) fT Cob ton toff tstg *h FE Rank classification Rank hFE Marking Symbol P 40 ~ 80 DVP Q 60 ~ 120 DVQ R 90 ~ 200 DVR 1 Transistor Switching time measurement circuit ton, toff Test Circuit 0.1µF Vout 220Ω Vin=10V 50Ω 3.3kΩ 3.3kΩ Vbb= –3V 50Ω Vin=10V VCC=3V 50Ω A 910Ω 90Ω 2SC4755 PC — Ta tstg Test Circuit 0.1µF 1kΩ Vout 240 Collector power dissipation PC (mW) 200 0.1µF 500Ω 500Ω Vbb=2V 160 VCC=10V 120 80 Vin Vout 10% 90% Vin Vout 10% 90% 0 Vin 10% 10% tstg (Waveform at A) 40 Vout ton toff 0 0 20 40 60 80 100 120 140 160 Ambient temperature Ta (˚C) IC — VCE Collector to emitter saturation voltage VCE(sat) (V) 120 Ta=25˚C 100 IB=3.0mA 2.5mA 80 2.0mA 1.5mA 60 1.0mA 100 30 10 3 1 0.3 0.1 0.03 0.01 1 3 VCE(sat) — IC Base to emitter saturation voltage VBE(sat) (V) IC/IB=10 100 30 10 3 1 0.3 0.1 0.03 0.01 10 30 100 300 1000 1 3 VBE(sat) — IC IC/IB=10 Collector current IC (mA) Ta=–25˚C 25˚C 75˚C 25˚C Ta=75˚C –25˚C 40 0.5mA 20 0 0 0.2 0.4 0.6 0.8 1.0 1.2 10 30 100 300 1000 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) hFE — IC 240 VCE=1V 1200 fT — IE Collector output capacitance Cob (pF) VCB=10V Ta=25˚C f=200MHz 6 Cob — VCB IE=0 f=1MHz Ta=25˚C Forward current transfer ratio hFE 200 Transition frequency fT (MHz) 1000 5 160 800 4 120 Ta=75˚C 80 25˚C –25˚C 40 600 3 400 2 200 1 0 0.1 0.3 1 3 10 30 100 0 –1 0 –3 –10 –30 –100 –300 –1000 1 3 10 30 100 Collector current IC (mA) Emitter current IE (mA) Collector to base voltage VCB (V) 2