2SC4809

Transistor 2SC4809 Silicon NPN epitaxial planer type For high-frequency amplification/oscillation/mixing Unit: mm 1.6±0.15 s Features q q 0.4 0.8±0.1 0.4 0.2–0.05 0.15–0.05 +0.1 q High transition frequency fT. Small collector output capacitance Cob and common base reverse transfer capacitance Crb. SS-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing. 1.6±0.1 1.0±0.1 0.5 1 0.5 3 2 0.45±0.1 0.3 0.75±0.15 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg (Ta=25˚C) Ratings 15 10 3 50 125 125 –55 ~ +125 Unit V V V mA mW ˚C ˚C 1:Base 2:Emitter 3:Collector EIAJ:SC–75 SS–Mini Type Package Marking symbol : 1S s Electrical Characteristics Parameter Collector cutoff current Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Collector output capacitance Base time constant Common emitter reverse transfer capacitance hFE ratio (Ta=25˚C) Symbol ICBO VCEO VEBO hFE* VCE(sat) fT Cob rbb' · CC Crb Conditions VCB = 10V, IE = 0 IC = 2mA, IB = 0 IE = 10µA, IC = 0 VCE = 4V, IC = 5mA IC = 20mA, IB = 4mA VCB = 4V, IE = –5mA, f = 200MHz VCB = 4V, IE = 0, f = 1MHz VCB = 4V, IE = –5mA, f = 31.9MHz VCB = 4V, IE = 0, f = 1MHz VCE = 4V, IC = 100µA VCE = 4V, IC = 5mA 0.75 1.4 1.9 1.4 11 0.45 1.6 10 3 75 400 0.5 2.7 V GHz pF PS pF min typ max 1 Unit µA V V *h FE Rank classification Rank hFE Marking Symbol P 75 ~ 130 1SP Q 110 ~ 220 1SQ R 200 ~ 400 1SR 0 to 0.1 0.2±0.1 +0.1 1 Transistor PC — Ta 150 80 Ta=25˚C 70 125 50 2SC4809 IC — VCE 60 25˚C VCE=4V IC — VBE Collector power dissipation PC (mW) Collector current IC (mA) 60 50 40 30 20 100µA 10 100 Collector current IC (mA) Ta=75˚C 40 –25˚C IB=500µA 400µA 300µA 200µA 75 30 50 20 25 10 0 0 20 40 60 80 100 120 140 160 0 0 2 4 6 8 10 12 0 0 0.4 0.8 1.2 1.6 2.0 Ambient temperature Ta (˚C) Collector to emitter voltage VCE (V) Base to emitter voltage VBE (V) VCE(sat) — IC Collector to emitter saturation voltage VCE(sat) (V) 100 30 10 3 1 0.3 0.1 0.03 0.01 0.1 25˚C –25˚C Ta=75˚C IC/IB=10 360 hFE — IC 4.0 VCE=4V fT — I E VCB=4V Ta=25˚C Forward current transfer ratio hFE 300 Ta=75˚C 240 Transition frequency fT (GHz) 10 30 100 3.5 3.0 2.5 2.0 1.5 1.0 0.5 180 25˚C 120 –25˚C 60 0.3 1 3 10 30 100 0 0.1 0.3 1 3 0 – 0.1 – 0.3 –1 –3 –10 –30 –100 Collector current IC (mA) Collector current IC (mA) Emitter current IE (mA) Cob — VCB 1.6 Collector output capacitance Cob (pF) 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 1 3 10 IE=0 f=1MHz Ta=25˚C 30 100 Collector to base voltage VCB (V) 2