2SC4835

Transistor 2SC4835 Silicon NPN epitaxial planer type For UHF band low-noise amplification Unit: mm 2.1±0.1 s Features q q q q 0.425 1.25±0.1 0.425 Low noise figure NF. High gain. High transition frequency fT. S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. 0.65 1 2.0±0.2 1.3±0.1 0.65 3 2 0.2 0.9±0.1 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg (Ta=25˚C) Ratings 15 10 2 80 150 150 –55 ~ +150 Unit V V V mA mW ˚C ˚C 0.7±0.1 0 to 0.1 0.2±0.1 1:Base 2:Emitter 3:Collector EIAJ:SC–70 S–Mini Type Package Marking symbol : 3M s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Collector to base voltage Collector to emitter voltage Forward current transfer ratio Transition frequency Collector output capacitance Foward transfer gain Maximum unilateral power gain Noise figure (Ta=25˚C) Symbol ICBO IEBO VCBO VCEO hFE fT Cob | S21e |2 GUM NF Conditions VCB = 10V, IE = 0 VEB = 2V, IC = 0 IC = 10µA, IE = 0 IC = 100µA, IB = 0 VCE = 8V, IC = 20mA* VCE = 8V, IC = 15mA, f = 800MHz VCB = 10V, IE = 0, f = 1MHz VCE = 8V, IC = 15mA, f = 800MHz VCE = 8V, IC = 15mA, f = 800MHz VCE = 8V, IC = 7mA, f = 800MHz 11 15 10 50 5 150 6 0.7 14 15 1.3 * min typ max 1 1 0.15–0.05 +0.1 0.3–0 +0.1 Unit µA µA V V 200 GHz 1.2 pF dB dB 2 dB Pulse measurement 1 Transistor PC — Ta 240 24 Ta=25˚C 200 20 IB=200µA 100 2SC4835 IC — VCE 120 VCE=8V IC — VBE Collector power dissipation PC (mW) Collector current IC (mA) Collector current IC (mA) 180µA 160µA 25˚C Ta=75˚C 80 –25˚C 160 16 140µA 120µA 120 12 100µA 80µA 60µA 60 80 8 40 40 4 40µA 20µA 20 0 0 20 40 60 80 100 120 140 160 0 0 2 4 6 8 10 12 0 0 0.4 0.8 1.2 1.6 2.0 Ambient temperature Ta (˚C) Collector to emitter voltage VCE (V) Base to emitter voltage VBE (V) VCE(sat) — IC Collector to emitter saturation voltage VCE(sat) (V) 100 30 10 3 1 0.3 0.1 0.03 0.01 0.1 IC/IB=10 600 hFE — IC 12 VCE=8V fT — IC VCE=8V f=800MHz Ta=25˚C Forward current transfer ratio hFE 500 Transition frequency fT (GHz) 10 30 100 10 400 Ta=75˚C 300 25˚C 200 –25˚C 100 8 Ta=75˚C 25˚C –25˚C 6 4 2 0.3 1 3 10 30 100 0 0.1 0.3 1 3 0 0.1 0.3 1 3 10 30 100 Collector current IC (mA) Collector current IC (mA) Collector current IC (mA) Cob — VCB Collector output capacitance Cob (pF) IE=0 f=1MHz Ta=25˚C GUM — IC Maximum unilateral power gain GUM (dB) 24 VCE=8V f=800MHz Ta=25˚C 12 NF — IC VCE=8V (Rg=50Ω) f=800MHz Ta=25˚C 2.4 2.0 20 10 1.6 16 Noise figure NF (dB) 0.3 1 3 10 30 100 8 1.2 12 6 0.8 8 4 0.4 4 2 0 0.1 0.3 1 3 10 30 100 0 0.1 0 0.1 0.3 1 3 10 30 100 Collector to base voltage VCB (V) Collector current IC (mA) Collector current IC (mA) 2