2SC4953

Power Transistors 2SC4953 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm s Features q q q q q 9.9±0.3 3.0±0.5 4.6±0.2 2.9±0.2 High-speed switching High collector to base voltage VCBO Wide area of safe operation (ASO) Satisfactory linearity of foward current transfer ratio hFE Dielectric breakdown voltage of the package: > 5kV (TC=25˚C) Ratings 500 500 400 7 6 3 1.2 30 2.0 150 –55 to +150 Unit V V V V A A A W ˚C ˚C 15.0±0.5 φ3.2±0.1 13.7±0.2 4.2±0.2 1.4±0.2 1.6±0.2 0.8±0.1 2.54±0.3 3 5.08±0.5 2.6±0.1 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature Symbol VCBO VCES VCEO VEBO ICP IC IB PC Tj Tstg 0.55±0.15 1 2 1:Base 2:Collector 3:Emitter TO–220D Full Pack Package s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time (TC=25˚C) Symbol ICBO IEBO VCEO hFE1 hFE2 VCE(sat) VBE(sat) fT ton tstg tf Conditions VCB = 500V, IE = 0 VEB = 5V, IC = 0 IC = 10mA, IB = 0 VCE = 5V, IC = 0.1A VCE = 2V, IC = 1.2A IC = 1.5A, IB = 0.3A IC = 1.5A, IB = 0.3A VCE = 10V, IC = 0.2A, f = 1MHz IC = 1.5A, IB1 = 0.15A, IB2 = – 0.3A, VCC = 200V 10 1.0 3.0 0.3 400 10 8 40 1.0 1.5 V V MHz µs µs µs min typ max 100 100 Unit µA µA V 1 Power Transistors IC — VCE 5.0 TC=25˚C 4.5 IB=500mA 450mA 400mA 350mA 300mA 250mA 200mA 2.5 2.0 1.5 1.0 0.5 0 0 2 4 6 8 10 12 1 0 0 0.5 1.0 1.5 2.0 2.5 0.003 0.01 0.03 0.1 150mA 100mA 50mA 7 8 IC/IB=5 300 2SC4953 IC — VCE(sat) hFE — IC VCE=5V Collector current IC (A) Collector current IC (A) 4.0 3.5 3.0 6 5 TC=–25˚C 25˚C 125˚C Forward current transfer ratio hFE 100 TC=125˚C 25˚C 4 3 2 30 –25˚C 10 3 0.3 1 3 10 Collector to emitter voltage VCE (V) Collector to emitter saturation voltage VCE(sat) (V) Collector current IC (A) fT — IC 100 VCE=10V f=1MHz TC=25˚C 100 30 ton, tstg, tf — IC Pulsed tw=1ms Duty cycle=1% IC/IB=10(2IB1=–IB2) VCC=200V TC=25˚C Area of safe operation (ASO) 100 30 Non repetitive pulse Ta=25˚C Ta=85˚C ICP IC t=1ms 1s 10ms 1 0.3 0.1 0.03 0.01 Transition frequency fT (MHz) Switching time ton,tstg,tf (µs) 30 Collector current IC (A) 10 3 1 ton 0.3 0.1 0.03 tf 10 3 10 tstg 3 1 0.3 0.1 0.01 0.01 0.03 0.1 0.3 1 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 1 3 10 30 100 300 1000 Collector current IC (A) Collector current IC (A) Collector to emitter voltage VCE (V) Area of safe operation, reverse bias ASO 4.0 3.5 IC/IB=5 Lcoil=100µH TC=25˚C Collector current IC (A) 3.0 2.5 2.0 1.5 1.0 0.5 0 0 100 200 300 400 500 600 700 800 Collector to emitter voltage VCE (V) 2