2SC4968

Transistor 2SC4968 Silicon NPN epitaxial planer type For UHF band low-noise amplification Unit: mm 5.0±0.2 4.0±0.2 s Features q q q s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg (Ta=25˚C) Ratings 15 10 2 80 600 150 –55 ~ +150 Unit V V V mA mW ˚C ˚C 2.54±0.15 123 0.45 –0.1 1.27 +0.2 13.5±0.5 Low noise figure NF. High gain. High transition frequency fT. 5.1±0.2 0.45 –0.1 1.27 +0.2 2.3±0.2 1:Base 2:Emitter 3:Collector JEDEC:TO–92 EIAJ:SC–43A s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Collector to base voltage Collector to emitter voltage Forward current transfer ratio Transition frequency Collector output capacitance Foward transfer gain Maximum unilateral power gain Noise figure (Ta=25˚C) Symbol ICBO IEBO VCBO VCEO hFE fT Cob | S21e NF |2 GUM Conditions VCB = 10V, IE = 0 VEB = 2V, IC = 0 IC = 10µA, IE = 0 IC = 100µA, IB = 0 VCE = 8V, IC = 20mA VCE = 8V, IC = 20mA, f = 800MHz VCB = 10V, IE = 0, f = 1MHz VCE = 8V, IC = 20mA, f = 800MHz VCE = 8V, IC = 20mA, f = 800MHz VCE = 8V, IC = 20mA, f = 800MHz 10 15 10 50 5 150 6 0.7 13.5 15 2 1.2 300 GHz pF dB dB dB min typ max 1 1 Unit µA µA V V 1 Transistor PC — Ta 800 24 Ta=25˚C 700 20 IB=200µA 100 2SC4968 IC — VCE 120 VCE=8V IC — VBE Collector power dissipation PC (mW) Collector current IC (mA) Collector current IC (mA) 180µA 160µA 600 500 400 300 200 100 0 0 20 40 60 80 100 120 140 160 25˚C Ta=75˚C 80 –25˚C 16 140µA 120µA 12 100µA 80µA 60µA 60 8 40 4 40µA 20µA 20 0 0 2 4 6 8 10 12 0 0 0.4 0.8 1.2 1.6 2.0 Ambient temperature Ta (˚C) Collector to emitter voltage VCE (V) Base to emitter voltage VBE (V) VCE(sat) — IC Collector to emitter saturation voltage VCE(sat) (V) 100 30 10 3 1 0.3 0.1 0.03 0.01 0.1 IC/IB=10 600 hFE — IC 12 VCE=8V fT — IC VCE=8V f=800MHz Ta=25˚C Forward current transfer ratio hFE 500 Transition frequency fT (GHz) 10 30 100 10 400 Ta=75˚C 300 25˚C 200 –25˚C 100 8 Ta=75˚C 25˚C –25˚C 6 4 2 0.3 1 3 10 30 100 0 0.1 0.3 1 3 0 0.1 0.3 1 3 10 30 100 Collector current IC (mA) Collector current IC (mA) Collector current IC (mA) Cob — VCB Collector output capacitance Cob (pF) IE=0 f=1MHz Ta=25˚C GUM — IC Maximum unilateral power gain GUM (dB) 24 VCE=8V f=800MHz Ta=25˚C 12 NF — IC VCE=8V (Rg=50Ω) f=800MHz Ta=25˚C 2.4 2.0 20 10 1.6 16 Noise figure NF (dB) 0.3 1 3 10 30 100 8 1.2 12 6 0.8 8 4 0.4 4 2 0 0.1 0.3 1 3 10 30 100 0 0.1 0 0.1 0.3 1 3 10 30 100 Collector to base voltage VCB (V) Collector current IC (mA) Collector current IC (mA) 2