2SC5019

Transistor 2SC5019 Silicon NPN epitaxial planer type For UHF band low-noise amplification Unit: mm s Features 2.6±0.1 4.5±0.1 1.6±0.2 1.5±0.1 q q q q Low noise figure NF. High gain. High transition frequency fT. Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. 0.4max. 45° 1.0–0.2 +0.1 0.4±0.08 0.5±0.08 1.5±0.1 3.0±0.15 3 2 1 4.0–0.20 0.4±0.04 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature * (Ta=25˚C) Ratings 15 10 2 80 1 150 –55 ~ +150 Unit V V V mA W ˚C ˚C 1:Base 2:Collector 3:Emitter EIAJ:SC–62 Mini Power Type Package marking Symbol VCBO VCEO VEBO IC PC* Tj Tstg Marking symbol : W Printed circuit board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Collector to base voltage Collector to emitter voltage Forward current transfer ratio Transition frequency Collector output capacitance Foward transfer gain Maximum unilateral power gain Noise figure (Ta=25˚C) Symbol ICBO IEBO VCBO VCEO hFE fT Cob | S21e |2 GUM NF Conditions VCB = 10V, IE = 0 VEB = 2V, IC = 0 IC = 10µA, IE = 0 IC = 100µA, IB = 0 VCE = 8V, IC = 20mA VCE = 8V, IC = 20mA, f = 800MHz VCB = 10V, IE = 0, f = 1MHz VCE = 8V, IC = 20mA, f = 800MHz VCE = 8V, IC = 20mA, f = 800MHz VCE = 8V, IC = 20mA, f = 800MHz 7.5 15 10 80 5 6 0.9 10 11.5 1.7 1.2 250 GHz pF dB dB dB min typ max 1 1 Unit µA µA V V 2.5±0.1 +0.25 1 Transistor PC — Ta 1.4 2SC5019 IC — VCE 24 Ta=25˚C 20 IB=200µA 100 120 VCE=8V IC — VBE Collector power dissipation PC (W) 1.2 Collector current IC (mA) Collector current IC (mA) Printed circut board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion. 180µA 160µA 25˚C Ta=75˚C 80 –25˚C 1.0 16 140µA 120µA 0.8 12 0.6 100µA 80µA 60µA 60 8 40 0.4 0.2 4 40µA 20µA 20 0 0 20 40 60 80 100 120 140 160 0 0 2 4 6 8 10 12 0 0 0.4 0.8 1.2 1.6 2.0 Ambient temperature Ta (˚C) Collector to emitter voltage VCE (V) Base to emitter voltage VBE (V) VCE(sat) — IC Collector to emitter saturation voltage VCE(sat) (V) 100 30 10 3 1 0.3 0.1 0.03 0.01 0.1 IC/IB=10 600 hFE — IC 12 VCE=8V fT — IC VCE=8V f=800MHz Ta=25˚C Forward current transfer ratio hFE 500 Transition frequency fT (GHz) 10 30 100 10 400 Ta=75˚C 300 25˚C 200 –25˚C 100 8 Ta=75˚C 25˚C –25˚C 6 4 2 0.3 1 3 10 30 100 0 0.1 0.3 1 3 0 0.1 0.3 1 3 10 30 100 Collector current IC (mA) Collector current IC (mA) Collector current IC (mA) Cob — VCB Collector output capacitance Cob (pF) IE=0 f=1MHz Ta=25˚C GUM — IC Maximum unilateral power gain GUM (dB) 24 VCE=8V f=800MHz Ta=25˚C 12 NF — IC VCE=8V (Rg=50Ω) f=800MHz Ta=25˚C 2.4 2.0 20 10 1.6 16 Noise figure NF (dB) 0.3 1 3 10 30 100 8 1.2 12 6 0.8 8 4 0.4 4 2 0 0.1 0.3 1 3 10 30 100 0 0.1 0 0.1 0.3 1 3 10 30 100 Collector to base voltage VCB (V) Collector current IC (mA) Collector current IC (mA) 2