2SC5034

Power Transistors 2SC5034 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm 4.6±0.2 s Features q q q φ3.2±0.1 9.9±0.3 2.9±0.2 4.1±0.2 8.0±0.2 Solder Dip High collector to emitter VCEO High-speed switching Full-pack package with outstanding insulation, which can be installed to the heat sink with one screw (TC=25˚C) Ratings 500 500 400 7 15 7 3 35 2.0 150 –55 to +150 Unit V V V V A A A W ˚C ˚C 15.0±0.3 3.0±0.2 13.7–0.2 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature Symbol VCBO VCES VCEO VEBO ICP IC IB PC Tj Tstg +0.5 1.2±0.15 1.45±0.15 0.75±0.1 2.54±0.2 5.08±0.4 2.6±0.1 0.7±0.1 7° 123 1:Base 2:Collector 3:Emitter TO–220E Full Pack Package s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time (TC=25˚C) Symbol ICBO IEBO VCEO hFE1 hFE2 VCE(sat) VBE(sat) fT ton tstg tf Conditions VCB = 500V, IE = 0 VEB = 5V, IC = 0 IC = 10mA, IB = 0 VCE = 5V, IC = 0.1A VCE = 5V, IC = 3A IC = 3A, IB = 0.6A IC = 3A, IB = 0.6A VCE = 10V, IC = 0.5A, f = 1MHz IC = 3A, IB1 = 0.6A, IB2 = –1.2A, VCC = 150V 10 1.0 2.0 0.3 400 10 8 1.0 1.5 V V MHz µs µs µs min typ max 100 100 Unit µA µA V 1 Power Transistors PC — Ta 80 5 (1) TC=Ta (2) With a 100 × 100 × 2mm Al heat sink (3) Without heat sink (PC=2.0W) TC=25˚C IB=300mA 250mA 200mA 3 150mA 100mA 2 80mA 60mA 40mA 1 10 0 0 20 40 60 80 100 120 140 160 (2) (3) 0 0 2 4 6 8 10 20mA 2SC5034 IC — VCE Collector to emitter saturation voltage VCE(sat) (V) 100 IC/IB=5 30 10 3 25˚C 1 0.3 0.1 0.03 0.01 0.01 0.03 TC=100˚C –25˚C VCE(sat) — IC Collector power dissipation PC (W) 70 60 50 40 30 20 (1) Collector current IC (A) 4 0.1 0.3 1 3 10 Ambient temperature Ta (˚C) Collector to emitter voltage VCE (V) Collector current IC (A) VBE(sat) — IC 100 1000 IC/IB=5 30 10 3 25˚C 1 0.3 0.1 0.03 0.01 0.01 0.03 TC=–25˚C 100˚C hFE — IC 1000 VCE=5V 300 100 30 10 3 1 0.3 0.1 0.01 0.03 fT — IC VCE=10V f=1MHz TC=25˚C Base to emitter saturation voltage VBE(sat) (V) Forward current transfer ratio hFE 100 TC=100˚C 30 10 3 1 0.3 0.1 0.01 0.03 –25˚C 25˚C 0.1 0.3 1 3 10 0.1 0.3 1 3 10 Transition frequency fT (MHz) 300 0.1 0.3 1 3 10 Collector current IC (A) Collector current IC (A) Collector current IC (A) Cob — VCB 10000 100 IE=0 f=1MHz TC=25˚C 30 ton, tstg, tf — IC Pulsed tw=1ms Duty cycle=1% IC/IB=5 (2IB1=–IB2) VCC=150V TC=25˚C Area of safe operation (ASO) 100 30 Non repetitive pulse TC=25˚C ICP IC t=0.5ms 3 1 0.3 0.1 0.03 0.01 10ms 1ms Collector output capacitance Cob (pF) 3000 1000 300 100 30 10 3 1 0.1 Switching time ton,tstg,tf (µs) Collector current IC (A) 10 3 tstg 1 0.3 0.1 0.03 0.01 tf ton 10 DC 0.3 1 3 10 30 100 0 1 2 3 4 5 6 7 8 1 3 10 30 100 300 1000 Collector to base voltage VCB (V) Collector current IC (A) Collector to emitter voltage VCE (V) 2 Power Transistors Area of safe operation, reverse bias ASO 16 14 Lcoil=200µH IC/IB=5 (IB1=–IB2) TC=25˚C 2SC5034 Reverse bias ASO measuring circuit L coil IB1 Vin T.U.T IC Collector current IC (A) 12 10 8 6 4 2 0 0 100 200 300 400 500 600 700 800 –IB2 VCC IC tW Vclamp Collector to emitter voltage VCE (V) Rth(t) — t 102 (1) Without heat sink (2) With a 100 × 100 × 2mm Al heat sink (1) Thermal resistance Rth(t) (˚C/W) 10 (2) 1 10–1 10–2 10–4 10–3 10–2 10–1 1 10 102 103 104 Time t (s) 3