2SC5036A

Power Transistors 2SC5036, 2SC5036A Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm 4.6±0.2 φ3.2±0.1 9.9±0.3 2.9±0.2 s Features q q q q q 4.1±0.2 8.0±0.2 Solder Dip High-speed switching High collector to base voltage VCBO Wide area of safe operation (ASO) Satisfactory linearity of foward current transfer ratio hFE Full-pack package with outstanding insulation, which can be installed to the heat sink with one screw (TC=25˚C) Ratings 900 1000 900 1000 800 7 2 1 0.3 30 2 150 –55 to +150 Unit V 15.0±0.3 3.0±0.2 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SC5036 2SC5036A 2SC5036 Symbol VCBO VCES VCEO VEBO ICP IC IB Ta=25°C PC Tj Tstg 13.7–0.2 +0.5 1.2±0.15 1.45±0.15 0.75±0.1 2.54±0.2 5.08±0.4 2.6±0.1 0.7±0.1 7° 123 emitter voltage 2SC5036A Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power TC=25°C dissipation Junction temperature Storage temperature V V V A A A W ˚C ˚C 1:Base 2:Collector 3:Emitter TO–220E Full Pack Package s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time 2SC5036 2SC5036A (TC=25˚C) Symbol ICBO IEBO VCEO hFE1 hFE2 VCE(sat) VBE(sat) fT ton tstg tf Conditions VCB = 900V, IE = 0 VCB = 1000V, IE = 0 VEB = 7V, IC = 0 IC = 10mA, IB = 0 VCE = 5V, IC = 0.1A VCE = 5V, IC = 0.2A IC = 0.2A, IB = 0.04A IC = 0.2A, IB = 0.04A VCE = 10V, IC = 0.05A, f = 1MHz IC = 0.2A, IB1 = 0.04A, IB2 = – 0.08A, VCC = 250V 15 0.7 2.5 0.3 800 8 3 1.5 1.5 V V MHz µs µs µs min typ max 50 50 50 Unit µA µA µA V 1 Power Transistors PC — Ta 40 1.2 (1) TC=Ta (2) With a 100 × 100 × 2mm Al heat sink (3) With a 50 × 50 × 2mm Al heat sink (4) Without heat sink (PC=2W) TC=25˚C 1.0 IB=400mA 350mA 300mA 250mA 200mA 150mA 100mA 80mA 60mA 40mA 20mA 0.2 2SC5036, 2SC5036A IC — VCE Collector to emitter saturation voltage VCE(sat) (V) 100 IC/IB=5 30 10 3 –25˚C 1 0.3 0.1 0.03 0.01 0.01 0.03 TC=100˚C 25˚C VCE(sat) — IC Collector power dissipation PC (W) 30 Collector current IC (A) (1) 0.8 20 0.6 0.4 10 (2) (3) (4) 0 0 20 40 60 80 100 120 140 160 0 0 2 4 6 8 10 12 0.1 0.3 1 3 10 Ambient temperature Ta (˚C) Collector to emitter voltage VCE (V) Collector current IC (A) VBE(sat) — IC 100 hFE — IC IC/IB=5 1000 VCE=5V 100 fT — IC VCE=10V f=1MHz TC=25˚C Base to emitter saturation voltage VBE(sat) (V) Forward current transfer ratio hFE 30 300 Transition frequency fT (MHz) 10 30 10 100 10 3 30 3 1 TC=–25˚C 25˚C 100˚C 10 1 0.3 3 TC=–25˚C 25˚C 100˚C 0.1 0.3 1 3 0.3 0.1 0.01 0.03 0.1 0.3 1 3 10 1 0.01 0.03 0.1 0.001 0.003 0.01 0.03 0.1 0.3 1 Collector current IC (A) Collector current IC (A) Collector current IC (A) Cob — VCB 1000 100 IE=0 f=1MHz TC=25˚C 30 ton, tstg, tf — IC Pulsed tw=1ms Duty cycle=1% IC/IB=5 (2IB1=–IB2) VCC=200V TC=25˚C Area of safe operation (ASO) 10 3 Non repetitive pulse TC=25˚C Collector output capacitance Cob (pF) Switching time ton,tstg,tf (µs) 300 10 3 tstg 1 ton 0.3 0.1 0.03 Collector current IC (A) 1 0.3 0.1 0.03 0.01 0.003 0.001 0.3s t=10ms 100 30 10 tf 3 1 1 3 10 30 100 0.01 0 0.2 0.4 0.6 0.8 1 3 10 30 100 300 1000 Collector to base voltage VCB (V) Collector current IC (A) Collector to emitter voltage VCE (V) 2 Power Transistors Area of safe operation, reverse bias ASO 1.6 1.4 Lcoil=100µH IC/IB=5 (IB1=–IB2) TC=25˚C 2SC5036, 2SC5036A Reverse bias ASO measuring circuit L coil IB1 T.U.T IC Collector current IC (A) 1.2 1.0 0.8 0.6 0.4 0.2 0 0 2SC5036A 2SC5036 IC Vin –IB2 VCC tW Vclamp 200 400 600 800 1000 1200 1400 1600 Collector to emitter voltage VCE (V) Rth(t) — t 10000 Note: Rth was measured at Ta=25˚C and under natural convection. (1) PT=10V × 0.2A (2W) and without heat sink (2) PT=10V × 1.0A (10W) and with a 100 × 100 × 2mm Al heat sink Thermal resistance Rth(t) (˚C/W) 1000 100 (1) 10 (2) 1 0.1 10–4 10–3 10–2 10–1 1 10 102 103 104 Time t (s) 3