2SC5104

Power Transistors 2SC5104 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching 10.0±0.3 1.5±0.1 8.5±0.2 6.0±0.5 3.4±0.3 Unit: mm 1.0±0.1 s Features q q q q q 1.5max. 1.1max. High-speed switching High collector to base voltage VCBO Wide area of safe operation (ASO) Satisfactory linearity of foward current transfer ratio hFE N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. (TC=25˚C) Ratings 500 500 400 7 6 3 1.2 30 1.3 150 –55 to +150 Unit V 10.5min. 2.0 0.8±0.1 0.5max. 2.54±0.3 5.08±0.5 1 2 3 1:Base 2:Collector 3:Emitter N Type Package Unit: mm 3.4±0.3 1.0±0.1 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature Symbol VCBO VCES VCEO VEBO ICP IC IB PC Tj Tstg 8.5±0.2 6.0±0.3 1.5–0.4 V 2.0 3.0–0.2 V A A A 4.4±0.5 0.8±0.1 2.54±0.3 R0.5 R0.5 1.1 max. 0 to 0.4 5.08±0.5 1 2 3 W ˚C ˚C 1:Base 2:Collector 3:Emitter N Type Package (DS) s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time (TC=25˚C) Symbol ICBO IEBO VCEO hFE1 hFE2 VCE(sat) VBE(sat) fT ton tstg tf Conditions VCB = 500V, IE = 0 VEB = 5V, IC = 0 IC = 10mA, IB = 0 VCE = 5V, IC = 0.1A VCE = 2V, IC = 1.2A IC = 1.5A, IB = 0.3A IC = 1.5A, IB = 0.3A VCE = 10V, IC = 0.2A, f = 1MHz IC = 1.5A, IB1 = 0.15A, IB2 = – 0.3A, VCC = 200V 10 1.0 3.0 0.3 400 10 8 40 1.0 1.5 V V MHz µs µs µs min typ max 100 100 Unit µA µA V 4.4±0.5 14.7±0.5 V 10.0±0.3 +0.4 +0 1 Power Transistors PC — Ta 40 6 TC=25˚C (1) TC=Ta (2) With a 50 × 50 × 2mm Al heat sink (3) Without heat sink (PC=1.3W) 2SC5104 IC — VCE Collector to emitter saturation voltage VCE(sat) (V) 100 IC/IB=5 30 10 3 1 0.3 0.1 0.03 0.01 0.1 TC=100˚C 25˚C –25˚C VCE(sat) — IC Collector power dissipation PC (W) 5 30 Collector current IC (A) (1) IB=500mA 4 400mA 300mA 3 200mA 100mA 50mA 1 20 2 10 (2) (3) 0 0 20 40 60 80 100 120 140 160 0 0 2 4 6 8 10 12 0.3 1 3 10 30 100 Ambient temperature Ta (˚C) Collector to emitter voltage VCE (V) Collector current IC (A) VBE(sat) — IC 100 hFE — IC IC/IB=5 1000 VCE=5V 100 fT — IC VCE=10V f=1MHz TC=25˚C Base to emitter saturation voltage VBE(sat) (V) Forward current transfer ratio hFE 30 300 Transition frequency fT (MHz) 0.3 1 3 10 30 10 100 TC=125˚C 30 25˚C 10 –25˚C 10 3 TC=–25˚C 125˚C 25˚C 0.3 3 1 1 3 0.3 0.1 0.1 0.3 1 3 10 30 100 1 0.01 0.03 0.1 0.1 0.01 0.03 0.1 0.3 1 3 10 Collector current IC (A) Collector current IC (A) Collector current IC (A) Cob — VCB 1000 100 IE=0 f=1MHz TC=25˚C 30 ton, tstg, tf — IC Pulsed tw=1ms Duty cycle=1% IC/IB=10 (2IB1=–IB2) VCC=200V TC=25˚C tstg Area of safe operation (ASO) 100 30 Non repetitive pulse TC=25˚C Collector output capacitance Cob (pF) Switching time ton,tstg,tf (µs) 300 Collector current IC (A) 10 3 1 ton 0.3 0.1 0.03 10 3 1 ICP IC 10ms 300ms t=1ms 100 30 10 tf 0.3 0.1 0.03 0.01 3 1 1 3 10 30 100 0.01 0 1 2 3 4 1 3 10 30 100 300 1000 Collector to base voltage VCB (V) Collector current IC (A) Collector to emitter voltage VCE (V) 2 Power Transistors Area of safe operation, reverse bias ASO 4.0 3.5 Lcoil=100µH IC/IB=5 (IB1=–IB2) TC=25˚C 2SC5104 Reverse bias ASO measuring circuit L coil IB1 Vin T.U.T IC Collector current IC (A) 3.0 2.5 2.0 1.5 1.0 0.5 0 0 IC –IB2 VCC tW Vclamp 100 200 300 400 500 600 700 800 Collector to emitter voltage VCE (V) Rth(t) — t 103 (1) Without heat sink (2) With a 50 × 50 × 2mm Al heat sink (1) (2) 10 Thermal resistance Rth(t) (˚C/W) 102 1 10–1 10–2 10–4 10–3 10–2 10–1 1 10 102 103 104 Time t (s) 3