2SC5127

Power Transistors 2SC5127, 2SC5127A Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm 4.6±0.2 φ3.2±0.1 9.9±0.3 2.9±0.2 s Features q q q q 4.1±0.2 8.0±0.2 Solder Dip High-speed switching High collector to base voltage VCBO Wide area of safe operation (ASO) Full-pack package with outstanding insulation, which can be installed to the heat sink with one screw (TC=25˚C) Ratings 800 900 800 900 500 8 3.0 1.5 0.5 25 2 150 –55 to +150 Unit V 15.0±0.3 3.0±0.2 Parameter Collector to base voltage Collector to 2SC5127 2SC5127A 2SC5127 Symbol VCBO VCES VCEO VEBO ICP IC IB 13.7–0.2 +0.5 s Absolute Maximum Ratings 1.2±0.15 1.45±0.15 0.75±0.1 2.54±0.2 5.08±0.4 2.6±0.1 0.7±0.1 emitter voltage 2SC5127A Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature V V V A A A W ˚C ˚C 7° 123 1:Base 2:Collector 3:Emitter TO–220E Full Pack Package PC Tj Tstg s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time 2SC5127 2SC5127A (TC=25˚C) Symbol ICBO IEBO VCEO hFE1 hFE2 VCE(sat) VBE(sat) fT ton tstg tf Conditions VCB = 800V, IE = 0 VCB = 900V, IE = 0 VEB = 5V, IC = 0 IC = 10mA, IB = 0 VCE = 5V, IC = 0.1A VCE = 5V, IC = 0.6A IC = 0.6A, IB = 0.17A IC = 0.6A, IB = 0.17A VCE = 10V, IC = 0.1A, f = 1MHz IC = 0.6A, IB1 = 0.17A, IB2 = – 0.34A, VCC = 200V 20 1.0 3.0 0.3 500 15 8 1.0 1.5 V V MHz µs µs µs min typ max 100 100 100 Unit µA µA V 1 Power Transistors PC — Ta 40 1.2 (1) TC=Ta (2) With a 100 × 100 × 2mm Al heat sink (3) With a 50 × 50 × 2mm Al heat sink (4) Without heat sink (PC=2W) TC=25˚C IB=150mA 1.0 2SC5127/2SC5127A IC — VCE Collector to emitter saturation voltage VCE(sat) (V) 100 IC/IB=5 30 10 3 1 25˚C 0.3 TC=100˚C 0.1 –25˚C 0.03 0.01 0.01 0.03 VCE(sat) — IC Collector power dissipation PC (W) 30 (1) Collector current IC (A) 100mA 0.8 80mA 60mA 0.6 40mA 20 0.4 20mA 10mA 10 (2) (3) (4) 0.2 0 0 20 40 60 80 100 120 140 160 0 0 2 4 6 8 10 12 0.1 0.3 1 3 10 Ambient temperature Ta (˚C) Collector to emitter voltage VCE (V) Collector current IC (A) VBE(sat) — IC 100 hFE — IC Collector output capacitance Cob (pF) IC/IB=5 1000 VCE=5V 1000 Cob — VCB IE=0 f=1MHz TC=25˚C Base to emitter saturation voltage VBE(sat) (V) 30 Forward current transfer ratio hFE 300 300 10 100 100 3 TC=–25˚C 1 100˚C 0.3 25˚C 30 25˚C TC=100˚C 30 10 –25˚C 10 3 3 0.1 0.01 0.03 0.1 0.3 1 3 10 1 0.01 0.03 1 0.1 0.3 1 3 10 1 3 10 30 100 Collector current IC (A) Collector current IC (A) Collector to base voltage VCB (V) fT — IC 100 VCE=10V f=1MHz TC=25˚C 100 30 ton, tstg, tf — IC Pulsed tw=1ms Duty cycle=1% IC/IB=3.5 (2IB1=–IB2) VCC=200V TC=25˚C ton Area of safe operation (ASO) 10 3 Non repetitive pulse TC=25˚C t=0.5ms 1 0.3 10ms 0.1 0.03 0.01 0.003 0.001 DC 1ms Transition frequency fT (MHz) Switching time ton,tstg,tf (µs) 30 10 3 tstg 1 0.3 10 3 1 tf 0.1 0.03 0.3 0.1 0.01 0.01 0.03 0.1 0.3 1 0 0.5 1.0 1.5 2.0 Collector current IC (A) 1 3 10 30 100 300 1000 Collector current IC (A) Collector current IC (A) Collector to emitter voltage VCE (V) 2 Power Transistors Area of safe operation, reverse bias ASO 4.0 3.5 Lcoil=180µH IC/IB=5 (IB1=–IB2) TC