2SC5244

Power Transistors 2SC5244, 2SC5244A Silicon NPN triple diffusion mesa type For horizontal deflection output 20.0±0.5 Unit: mm φ 3.3±0.2 5.0±0.3 3.0 6.0 s Features q q q 1.5 1.5 Solder Dip s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SC5244 2SC5244A 2SC5244 Symbol VCBO VCES VEBO ICP IC PC Tj Tstg 20.0±0.5 2.5 2.0±0.3 3.0±0.3 1.0±0.2 (TC=25˚C) Ratings 1500 1600 1500 1600 6 20 30 200 3.5 150 –55 to +150 Unit V 2.7±0.3 0.6±0.2 5.45±0.3 10.9±0.5 emitter voltage 2SC5244A Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature V 1 2 3 V A A W ˚C ˚C 1:Base 2:Collector 3:Emitter TOP–3L Package s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Storage time Fall time 2SC5244 2SC5244A (TC=25˚C) Symbol ICBO IEBO hFE VCE(sat) VBE(sat) fT tstg tf Conditions VCB = 1500V, IE = 0 VCB = 1600V, IE = 0 VEB = 5V, IC = 0 VCE = 5V, IC = 10A IC = 10A, IB = 2.8A IC = 10A, IB = 2.8A VCE = 10V, IC = 0.1A, f = 0.5MHz IC = 12A, IB1 = 2.4A, IB2 = –4.8A, Resistance loaded 3 1.5 0.12 2.5 0.2 5 min typ max 1 1 50 12 3 1.5 V V MHz µs µs Unit mA µA 2.0 1.5 High breakdown voltage, and high reliability through the use of a glass passivation layer High-speed switching Wide area of safe operation (ASO) 26.0±0.5 10.0 2.0 4.0 3.0 1 Power Transistors PC — Ta 240 16 (1) TC=Ta (2) With a 100 × 100 × 2mm Al heat sink (3) Without heat sink (PC=3.0W) TC=25˚C 14 2SC5244, 2SC5244A IC — VCE 1000 VCE=5V hFE — IC Collector power dissipation PC (W) 220 200 180 160 140 120 100 80 60 40 (1) 12 10 8 Forward current transfer ratio hFE Collector current IC (A) IB=1000mA 800mA 600mA 400mA 100 TC=100˚C 25˚C 10 –25˚C 200mA 6 4 2 0 1 (3) 20 0 0 20 40 60 80 100 120 140 160 (2) 0 2 4 6 8 10 12 0.1 0.01 0.1 1 10 Ambient temperature Ta (˚C) Collector to emitter voltage VCE (V) Collector current IC (A) VCE(sat) — IC Collector to emitter saturation voltage VCE(sat) (V) 100 30 10 3 1 0.3 0.1 TC=–25˚C 0.03 0.01 0.1 25˚C 100˚C 100 VBE(sat) — IC Base to emitter saturation voltage VBE(sat) (V) IC/IB=3.5 IC/IB=3.5 Area of safe operation, horizontal operation ASO 50 f=64kHz, TC=25˚C Area of safe operation for the single pulse load curve due to discharge in the high-voltage rectifier tube during horizontal operation 10 Collector current IC (A) 40 30 1 TC=–25˚C 25˚C 100˚C 20 0.1 10