2SC5295

Transistors 2SC5295 Silicon NPN epitaxial planer type Unit: mm For 2 GHz band low-noise amplification I Features • High transition frequency fT • Low collector output capacitance Cob • SS-mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing. 0.2+0.1 –0.05 3 0.15+0.1 –0.05 0.8±0.1 1.6±0.15 1° 1 (0.5) (0.5) 1.0±0.1 1.6±0.1 5° 2 (0.4) Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Rating 15 10 2 65 125 125 −55 to +125 Unit 0 to 0.1 0.45±0.1 V V V mA mW °C °C 1: Base 2: Emitter 3: Collector EIAJ: SC-75 SS-Mini Type Package (3-pin) Marking Symbol: 3S I Electrical Characteristics Ta = 25°C ± 3°C Parameter Collector cutoff current Emitter cutoff current Forward current transfer ratio Transition frequency Collector output capacitance Forward transfer gain Power gain Noise figure Note) *: Rank classification Rank hFE Q 50 to 120 R 100 to 170 S 150 to 300 * Symbol ICBO IEBO hFE fT Cob | S21e | 2 GUM NF Conditions VCB = 10 V, IE = 0 VEB = 1 V, IC = 0 VCE = 8 V, IC = 20 mA VCE = 8 V, IC = 15 mA, f = 1.5 GHz VCB = 10 V, IE = 0, f = 1 MHz VCE = 8 V, IC = 15 mA, f = 1.5 GHz VCE = 8 V, IC = 15 mA, f = 1.5 GHz VCE = 8 V, IC = 7 mA, f = 1.5 GHz Min Typ 0.75±0.15 I Absolute Maximum Ratings Ta = 25°C (0.3) Max 1 1 0.2±0.1 Unit µA µA GHz 50 7.0 8.5 0.6 7 9 10 2.2 300 1.0 pF dB dB 3.0 dB 1