2SC5363

Transistor 2SC5363(Tentative) Silicon NPN epitaxial planer type For low-voltage high-frequency amplification Unit: mm 1.6±0.15 s Features q q q 0.4 0.8±0.1 0.4 0.2–0.05 0.15–0.05 +0.1 High transition frequency fT. Small collector output capacitance Cob. SS-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing. 1.6±0.1 1.0±0.1 0.5 1 0.5 3 2 0.45±0.1 0.3 0.75±0.15 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg (Ta=25˚C) Ratings 9 6 2 30 125 125 –55 ~ +125 Unit V V V mA mW ˚C ˚C 1:Base 2:Emitter 3:Collector EIAJ:SC–75 SS–Mini Type Package Marking symbol : 3Y s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Forward current transfer ratio Collector output capacitance Transition frequency Foward transfer gain Noise figure (Ta=25˚C) Symbol ICBO IEBO hFE Cob fT | S21e |2 NF Conditions VCB = 5V, IE = 0 VEB = 1V, IC = 0 VCE = 3V, IC = 10mA VCB = 3V, IE = 0, f = 1MHz VCE = 3V, IC = 10mA, f = 1.5GHz VCE = 0.3V, IC = 1mA, f = 0.9GHz VCE = 0.3V, IC = 1mA, f = 0.9GHz 40 100 0.4 10 6.5 1.7 min typ max 1 1 200 0.7 pF GHz dB dB Unit µA µA 0 to 0.1 0.2±0.1 +0.1 1 Transistor PC — Ta 150 60 Ta=25˚C 125 50 25 2SC5363 IC — VCE 30 VCE=3V IC — VBE Collector power dissipation PC (mW) Collector current IC (mA) Collector current IC (mA) 100 40 IB=600µA 500µA 20 Ta=75˚C 15 25˚C –25˚C 75 30 400µA 300µA 200µA 50 20 10 25 10 100µA 5 0 0 20 40 60 80 100 120 140 160 0 0 1 2 3 4 5 6 0 0 0.2 0.4 0.6 0.8 1.0 1.2 Ambient temperature Ta (˚C) Collector to emitter voltage VCE (V) Base to emitter voltage VBE (V) VCE(sat) — IC Collector to emitter saturation voltage VCE(sat) (V) 10 3 1 0.3 Ta=75˚C 0.1 0.03 0.01 0.003 0.001 0.1 25˚C –25˚C IC/IB=10 120 hFE — IC 1000 VCE=3V 300 100 30 10 3 1 0.3 0 0.1 0.1 0.1 fT — IC VCE=3V f=1.5GHz Forward current transfer ratio hFE 100 Ta=75˚C 80 25˚C 60 –25˚C 40 20 0.3 1 3 10 30 100 0.3 1 3 10 30 100 Transition frequency fT (GHz) 0.3 1 3 10 30 100 Collector current IC (mA) Collector current IC (mA) Collector current IC (mA) | S21e |2 — IC 12 4.8 NF — IC 1.2 Cob — VCB Collector output capacitance Cob (pF) VCE=0.3V f=900MHz IE=0 f=1MHz Ta=25˚C Forward transfer gain |S21e|2 (dB) VCE=0.3V f=900MHz 10 4.0 1.0 8 Noise figure NF (dB) 3.2 0.8 6 2.4 0.6 4 1.6 0.4 2 0.8 0.2 0 0.1 0.3 1 3 10 30 100 0 0.1 0 0.3 1 3 10 1 3 10 30 100 Collector current IC (mA) Collector current IC (mA) Collector to base voltage VCB (V) 2