2SC5379

Transistor 2SC5379 Silicon NPN epitaxial planer type For low-voltage low-noise high-frequency oscillation Unit: mm 1.6±0.15 s Features q q q q 0.4 0.8±0.1 0.4 0.2–0.05 0.15–0.05 +0.1 Low noise figure NF. High gain. High transition frequency fT. SS-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing. 1.6±0.1 1.0±0.1 0.5 1 0.5 3 2 0.45±0.1 0.3 0.75±0.15 Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 15 8 2 80 125 125 –55 ~ +125 Unit V V V mA mW ˚C ˚C 1:Base 2:Emitter 3:Collector EIAJ:SC–75 SS–Mini Type Package Marking symbol : HT s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Forward current transfer ratio Transition frequency Collector output capacitance Foward transfer gain Noise figure (Ta=25˚C) Symbol ICBO IEBO hFE fT Cob | S21e |2 NF * Conditions VCB = 10V, IE = 0 VEB = 1V, IC = 0 VCE = 5V, IC = 10mA VCE = 5V, IC = 10mA, f = 2GHz VCB = 5V, IE = 0, f = 1MHz VCE = 5V, IC = 10mA, f = 1GHz VCE = 5V, IC = 3mA, f = 1GHz min typ 0 to 0.1 s Absolute Maximum Ratings (Ta=25˚C) 0.2±0.1 max 1 1 +0.1 Unit µA µA 80 7.0 0.6 8.5 11.0 1.6 200 GHz 1.0 pF dB 2 dB *h FE Rank classification Rank hFE Marking Symbol Q 80 ~ 115 HTQ R 95 ~ 155 HTR S 135 ~ 200 HTS 1 Transistor PC — Ta 150 60 Ta=25˚C 125 50 50 2SC5379 IC — VCE 60 VCE=5V IC — VBE Collector power dissipation PC (mW) Collector current IC (mA) Collector current IC (mA) 100 40 IB=300µA 30 250µA 200µA 20 150µA 100µA 10 50µA 40 Ta=75˚C 30 25˚C –25˚C 75 50 20 25 10 0 0 20 40 60 80 100 120 140 160 0 0 1 2 3 4 5 6 0 0 0.2 0.4 0.6 0.8 1.0 1.2 Ambient temperature Ta (˚C) Collector to emitter voltage VCE (V) Base to emitter voltage VBE (V) VCE(sat) — IC Collector to emitter saturation voltage VCE(sat) (V) 100 30 10 3 1 0.3 0.1 0.03 0.01 0.1 IC/IB=10 240 hFE — IC 10 VCE=5V fT — IC VCE=5V Forward current transfer ratio hFE 200 Ta=75˚C 160 25˚C 120 –25˚C 80 Transition frequency fT (GHz) 30 100 8 6 4 Ta=75˚C 25˚C –25˚C 40 2 0.3 1 3 10 30 100 0 0.1 0 0.3 1 3 10 0 4 8 12 16 20 Collector current IC (mA) Collector current IC (mA) Collector current IC (mA) Cob — VCB 1.0 15 | S21e |2 — IC 3.0 NF — IC VCE=5V f=1GHz Ta=25˚C Collector output capacitance Cob (pF) 0.8 Forward transfer gain |S21e|2 (dB) 12 2.4 0.6 9 Noise figure NF (dB) VCE=5V f=1GHz Ta=25˚C 0 4 8 12 16 20 1.8 0.4 6 1.2 0.2 3 0.6 0 0 2 4 6 8 10 0 0 0 2 4 6 8 10 Collector to base voltage VCB (V) Collector current IC (mA) Collector current IC (mA) 2