2SC5419

Transistor 2SC5419 Silicon NPN triple diffusion planer type For low-frequency output amplification Unit: mm 6.9±0.1 0.15 1.05 2.5±0.1 ±0.05 (1.45) 0.8 0.5 4.5±0.1 0.7 4.0 s Features q q q 0.65 max. 1.0 1.0 High collector to emitter voltage VCEO. High transition frequency fT. Allowing supply with the radial taping. 0.2 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature *1 (Ta=25˚C) Ratings 300 300 7 100 70 1.0 150 –55 ~ +150 1cm2 Unit 0.45–0.05 0.45–0.05 +0.1 +0.1 Symbol VCBO VCEO VEBO ICP IC PC*1 Tj Tstg 2.5±0.5 1 2 2.5±0.5 3 V V mA mA W ˚C ˚C 1.2±0.1 0.65 max. 0.45+0.1 – 0.05 Note: In addition to the lead type shown in the upper figure, the type as shown in the lower figure is also available. 1:Emitter 2:Collector 3:Base MT2 Type Package Printed circuit board: Copper foil area of thickness of 1.7mm for the collector portion or more, and the board 2.5±0.1 V (HW type) s Electrical Characteristics Parameter Collector cutoff current Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Collector output capacitance (Ta=25˚C) Symbol ICEO VCEO VEBO hFE fT Cob *1 Conditions VCE = 120V, IB = 0 IC = 100µA, IB = 0 IE = 1µA, IC = 0 VCE = 10V, IC = 5mA IC = 50mA, IB = 5mA VCB = 10V, IE = –10mA, f = 200MHz VCB = 10V, IE = 0, f = 1MHz min typ max 1 14.5±0.5 Unit µA V V 300 7 30 220 1.2 50 10 VCE(sat) V MHz pF *1h FE Rank classification P 30 ~ 100 Q 60 ~ 150 R 100 ~ 220 Rank hFE 1 Transistor PC — Ta 2.0 120 Printed circut board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion. Ta=25˚C 100 1.8mA 1.6mA 1.4mA 1.2mA 1.0mA 0.8mA 0.6mA 100 2SC5419 IC — VCE 120 VCE=10V 25˚C IC — VBE Collector power dissipation PC (W) Collector current IC (mA) Collector current IC (mA) 1.6 80 IB=2.0mA Ta=75˚C 80 –25˚C 1.2 60 60 0.8 0.4mA 40 0.2mA 40 0.4 20 20 0 0 20 40 60 80 100 120 140 160 0 0 2 4 6 8 10 12 0 0 0.2 0.4 0.6 0.8 1.0 1.2 Ambient temperature Ta (˚C) Collector to emitter voltage VCE (V) Base to emitter voltage VBE (V) IC — IB Collector to emitter saturation voltage VCE(sat) (V) 120 VCE=10V Ta=25˚C 100 10 3 1 VCE(sat) — IC IC/IB=10 1200 IB — VBE VCE=10V Ta=25˚C 1000 Collector current IC (mA) 80 Ta=75˚C 0.3 0.1 0.03 0.01 0.003 0.001 1 3 10 30 100 300 1000 25˚C –25˚C Base current IB (µA) 800 60 600 40 400 20 200 0 0 0.4 0.8 1.2 1.6 2.0 2.4 0 0 0.2 0.4 0.6 0.8 1.0 Base current IB (mA) Collector current IC (mA) Base to emitter voltage VBE (V) hFE — IC 300 12 Ta=75˚C 250 25˚C 200 –25˚C 150 Cob — VCB Collector output capacitance Cob (pF) VCE=10V f=1MHz IE=0 Ta=25˚C Forward current transfer ratio hFE 10 8 6 100 4 50 2 0 1 3 10 30 100 300 1000 0 1 3 10 30 100 Collector current IC (mA) Collector to base voltage VCB (V) 2