2SC5583

Power Transistors 2SC5583 Silicon NPN triple diffusion mesa type Unit: mm For horizontal deflection output (10.0) (6.0) (2.0) (4.0) 20.0±0.5 φ 3.3±0.2 5.0±0.3 (3.0) I Features • High breakdown voltage, and high reliability through the use of a glass passivation layer • High-speed switching • Wide area of safe operation (ASO) 26.0±0.5 (3.0) (1.5) (1.5) 2.0±0.3 3.0±0.3 1.0±0.2 0.6±0.2 5.45±0.3 10.9±0.5 (1.5) 2.7±0.3 I Absolute Maximum Ratings TC = 25°C Parameter Collector to base voltage Collector to emitter voltage Symbol VCBO VCES VCEO Emitter to base voltage Peak collector current Collector current Base current Collector power dissipation TC = 2 5 ° C Ta = 2 5 ° C Tj Tstg VEBO ICP IC IB PC Rating 1 500 1 500 600 7 30 17 8 150 3 150 −55 to +150 °C °C Unit V V V V A A A W 20.0±0.5 (2.5) Solder Dip 1 2 3 1: Base 2: Collector 3: Emitter TOP-3L Package Marking Symbol: C5583 Internal Connection C B Junction temperature Storage temperature E I Electrical Characteristics TC = 25°C ± 3°C Parameter Collector cutoff current Symbol ICBO IEBO hFE VCE(sat) VBE(sat) fT tstg tf Conditions VCB = 1 000 V, IE = 0 VCB = 1 500 V, IE = 0 Emitter cutoff current Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Storage time Fall time VEB = 7 V, IC = 0 VCE = 5 V, IC = 8.5 A IC = 8.5 A, IB = 2.13 A IC = 8.5 A, IB = 2.13 A VCE = 10 V, IC = 0.1 A, f = 0.5 MHz IC = 8.5 A, Resistance loaded IB1 = 2.13 A, IB2 = −4.25 A 3 2.7 0.2 6 Min Typ Max 50 1 50 12 3 1.5 V V MHz µs µs Unit µA mA µA (2.0) 1