2SC5654

Transistors 2SC5654 Silicon NPN epitaxial planer type Unit: mm For DC-DC converter Complementary to 2SA2028 I Features • Low collector to emitter saturation voltage VCE(sat) • S-mini type package, allowing downsizing and thinning of the equipment and automatic insertion through the tape packing (0.425) 0.3+0.1 –0.0 3 0.15+0.10 –0.05 1.25±0.10 2.1±0.1 5˚ 1 2 0.2±0.1 (0.65) (0.65) 1.3±0.1 I Absolute Maximum Ratings Ta = 25°C Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Rating 20 20 5 1 3 150 150 −55 to +150 Unit V V V A A mW °C °C 2.0±0.2 10˚ 0.9±0.1 0.9+0.2 –0.1 1: Base 2: Emitter 3: Collector S Mini Type Package (3-pin) Marking Symbol: 2S I Electrical Characteristics Ta = 25°C ± 3°C Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Collector output capacitance Transition frequency Symbol VCBO VCEO VEBO hFE VCE(sat) Cob fT Conditions IC = 10 µA, IE = 0 IC = 1 mA, IB = 0 IE = 10 µA, IC = 0 VCE = 2 V, IC = 100 mA IC = 200 mA, IB = 10 mA VCB = 10 V, IE = 0, f = 1 MHz VCB = 10 V, IE = −10 mA, f = 200 MHz Min 20 20 5 160 60 12 180 560 100 30 mV pF MHz Typ Max Unit V V V 0 to 0.1 1