Transistors
2SD0602A
Silicon NPN epitaxial planer type
Unit: mm
For general amplification Complementary to 2SB0710A I Features
• Low collector to emitter saturation voltage VCE(sat) • Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing.
1
0.40+0.10 –0.05 3
1.50+0.25 –0.05 2.8+0.2 –0.3
0.16+0.10 –0.06
2
(0.65)
(0.95) (0.95) 1.9±0.1 2.90+0.20 –0.05 10°
1.1+0.2 –0.1
I Absolute Maximum Ratings Ta = 25°C
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Rating 60 50 5 1 500 200 150 −55 to +150 Unit V V V A mA mW °C °C
1: Base 2: Emitter 3: Collector
0 to 0.1
1.1+0.3 –0.1
JEDEC: TO-236 EIAJ: SC-59 Mini Type Package
Marking Symbol: X
I Electrical Characteristics Ta = 25°C ± 3°C
Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio
*1
Symbol ICBO VCBO VCEO VEBO hFE1 hFE2
*2
Conditions VCB = 20 V, IE = 0 IC = 10 µA, IE = 0 IC = 10 mA, IB = 0 IE = 10 µA, IC = 0 VCE = 10 V, IC = 150 mA VCE = 10 V, IC = 500 mA IC = 300 mA, IB = 30 mA VCB = 10 V, IE = −50 mA, f = 200 MHz VCB = 10 V, IE = 0, f = 1 MHz
Min
Typ
Max 0.1
Unit µA V V V
60 50 5 85 40 0.35 200 6 15 0.6 340
Collector to emitter saturation voltage *1 Transition frequency Collector output capacitance Note) *1: Pulse measurement *2: Rank classification Rank hFE1 Marking symbol Q 85 to 170 XQ
VCE(sat) fT Cob
MHz pF
R 120 to 240 XR
S 170 to 340 XS
No-rank 85 to 340 X
Product of no-rank is not classified and have no indication for rank.
0.4±0.2
5°
V
1
2SD0602A
PC Ta
240
Transistors
IC VCE
800 700 Ta = 25°C IB = 10 mA 9 mA 8 mA 7 mA 6 mA 5 mA 4 mA 400 300 200 100 3 mA 2 mA 1 mA 800 700
IC IB
VCE = 10 V Ta = 25°C
Collector power dissipation PC (mW)
200
Collector current IC (mA)
Collector current IC (mA)
600 500
600 500 400 300 200 100 0
160
120
80
40
0
0
40
80
120
160
0
0
4
8
12
16
20
0
2
4
6
8
10
Ambient temperature Ta (°C)
Collector to emitter voltage VCE (V)
Base current IB (mA)
VCE(sat) IC
Collector to emitter saturation voltage VCE(sat) (V)
100 30 10 3 1 0.3 0.1 0.03 0.01 0.01 0.03 Ta = 75°C 25°C −25°C
VBE(sat) IC
100
hFE IC
300 VCE = 10 V
Base to emitter saturation voltage VBE(sat) (V)
IC / IB = 10
IC / IB = 10
Forward current transfer ratio hFE
30 10 3 1 0.3 0.1 0.03 0.01 0.01 0.03 Ta = −25°C 75°C
250 Ta = 75°C 200 25°C −25°C
25°C
150
100
50
0.1
0.3
1
3
10
0.1
0.3
1
3
10
0 0.01 0.03
0.1
0.3
1
3
10
Collector current IC (A)
Collector current IC (A)
Collector current IC (A)
fT IE
240
Cob VCB
12
VCER RBE
Collector to emitter voltage VCER (V)
IE = 0 f = 1 MHz Ta = 25°C
120 IC = 2 mA Ta = 25°C 100
Transition frequency fT (MHz)
200
Collector output capacitance Cob (pF)
VCB = 10 V Ta = 25°C
10
160
8
80
120
6
60
80
4
40
40
2
20
0 −1
−2 −3 −5
−10
−20−30 −50 −100
0
1
0
2
3
5
10
20 30 50
100
1
3
10
30
100
300
1 000
Emitter current IE (mA)
Collector to base voltage VCB (V)
Base to emitter resistance RBE (kΩ)
2
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