2SD0814

Transistor 2SD814, 2SD814A Silicon NPN epitaxial planer type For high breakdown voltage low-frequency and low-noise amplification Unit: mm s Features q q q 2.8 –0.3 0.65±0.15 +0.2 0.95 High collector to emitter voltage VCEO. Low noise voltage NV. Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. (Ta=25˚C) 1.5 –0.05 +0.25 0.65±0.15 0.95 2.9 –0.05 1 1.9±0.2 +0.2 3 0.4 –0.05 +0.1 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SD814 2SD814A 2SD814 VCBO VCEO VEBO ICP IC PC Tj Tstg Symbol 2 1.45 1.1 –0.1 +0.2 Ratings 150 185 150 185 5 100 50 200 150 –55 ~ +150 Unit V emitter voltage 2SD814A Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature V V mA mA mW ˚C ˚C 1:Base 2:Emitter 3:Collector JEDEC:TO–236 EIAJ:SC–59 Mini Type Package Marking symbol : P(2SD814) L(2SD814A) s Electrical Characteristics Parameter Collector cutoff current Collector to emitter voltage 2SD814 2SD814A (Ta=25˚C) Symbol ICBO VCEO VEBO hFE* VCE(sat) fT Cob NV Conditions VCB = 100V, IE = 0 IC = 100µA, IB = 0 IE = 10µA, IC = 0 VCE = 5V, IC = 10mA IC = 30mA, IB = 3mA VCB = 10V, IE = –10mA, f = 200MHz VCB = 10V, IE = 0, f = 1MHz VCE = 10V, IC = 1mA, GV = 80dB Rg = 100kΩ, Function = FLAT 150 2.3 150 150 185 5 90 330 1 V MHz pF mV min typ max 1 Unit µA V V Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Collector output capacitance Noise voltage *h FE Rank classification Rank hFE Q 90 ~ 155 2SD814 2SD814A PQ LQ R 130 ~ 220 PR LR S 185 ~ 330 PS LS Marking Symbol 0 to 0.1 0.1 to 0.3 0.4±0.2 0.8 0.16 –0.06 +0.1 1 Transistor PC — Ta 240 120 Ta=25˚C 200 100 100 2SD814, 2SD814A IC — VCE 120 VCE=10V 25˚C IC — VBE Collector power dissipation PC (mW) Collector current IC (mA) Collector current IC (mA) 160 80 120 60 IB=2.0mA 1.8mA 1.6mA 1.4mA 1.2mA 1.0mA 0.8mA 0.6mA 0.4mA Ta=75˚C 80 –25˚C 60 80 40 0.2mA 20 40 40 20 0 0 20 40 60 80 100 120 140 160 0 0 2 4 6 8 10 12 0 0 0.4 0.8 1.2 1.6 2.0 Ambient temperature Ta (˚C) Collector to emitter voltage VCE (V) Base to emitter voltage VBE (V) VCE(sat) — IC Collector to emitter saturation voltage VCE(sat) (V) 100 30 10 3 1 0.3 0.1 0.03 0.01 0.1 Ta=75˚C 25˚C –25˚C IC/IB=10 600 hFE — IC 200 VCE=10V fT — I E VCB=10V Ta=25˚C Forward current transfer ratio hFE 500 Transition frequency fT (MHz) 30 100 160 400 120 300 Ta=75˚C 25˚C –25˚C 80 200 100 40 0.3 1 3 10 30 100 0 0.1 0.3 1 3 10 0 –1 –3 –10 –30 –100 Collector current IC (mA) Collector current IC (mA) Emitter current IE (mA) Cob — VCB 5 Collector output capacitance Cob (pF) IE=0 f=1MHz Ta=25˚C 4 3 2 1 0 1 3 10 30 100 Collector to base voltage VCB (V) 2