2SD1011

Transistor 2SD1011 Silicon NPN epitaxial planer type For low-frequency amplification Unit: mm 5.0±0.2 4.0±0.2 q q q s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg (Ta=25˚C) Ratings 100 100 15 50 20 300 150 –55 ~ +150 Unit V V 123 0.45 –0.1 1.27 +0.2 13.5±0.5 High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). High emitter to base voltage VEBO. 5.1±0.2 s Features 0.45 –0.1 1.27 +0.2 2.3±0.2 V mA mA mW ˚C ˚C 2.54±0.15 1:Emitter 2:Collector 3:Base JEDEC:TO–92 EIAJ:SC–43A s Electrical Characteristics Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Noise voltage (Ta=25˚C) Symbol ICBO ICEO VCBO VCEO VEBO hFE fT NV * Conditions VCB = 60V, IE = 0 VCE = 60V, IB = 0 IC = 10µA, IE = 0 IC = 1mA, IB = 0 IE = 10µA, IC = 0 VCE = 10V, IC = 2mA IC = 10mA, IB = 1mA VCB = 10V, IE = –2mA, f = 200MHz VCE = 10V, IC = 1mA, GV = 80dB Rg = 100kΩ, Function = FLAT min typ max 100 1 Unit nA µA V V V 100 100 15 400 0.05 200 80 1200 0.2 VCE(sat) V MHz mV *h FE Rank classification R 400 ~ 800 S 600 ~ 1200 hFE Rank 1 Transistor PC — Ta 500 80 Ta=25˚C 70 400 50 25˚C Ta=75˚C 40 –25˚C 2SD1011 IC — VCE 60 VCE=10V IC — VBE Collector power dissipation PC (mW) Collector current IC (mA) 60 50 40 30 20 300 IB=100µA 80µA 60µA 50µA 40µA 30µA 20µA 10µA Collector current IC (mA) 30 200 20 100 10 10 0 0 20 40 60 80 100 120 140 160 0 0 2 4 6 8 10 12 0 0 0.4 0.8 1.2 1.6 2.0 Ambient temperature Ta (˚C) Collector to emitter voltage VCE (V) Base to emitter voltage VBE (V) VCE(sat) — IC Collector to emitter saturation voltage VCE(sat) (V) 100 30 10 3 1 0.3 25˚C 0.1 –25˚C 0.03 0.01 0.1 Ta=75˚C IC/IB=10 2000 hFE — IC 200 VCE=10V fT — I E VCB=10V Ta=25˚C Forward current transfer ratio hFE 1600 Transition frequency fT (MHz) 10 30 100 Ta=75˚C 160 1200 25˚C 120 –25˚C 800 80 400 40 0.3 1 3 10 30 100 0 0.1 0.3 1 3 0 – 0.1 – 0.3 –1 –3 –10 –30 –100 Collector current IC (mA) Collector current IC (mA) Emitter current IE (mA) Cob — VCB 6 NV — IC IE=0 f=1MHz Ta=25˚C 100 VCE=10V GV=80dB Function=FLAT Ta=25˚C Rg=100kΩ 100 NV — VCE Collector output capacitance Cob (pF) 5 Rg=100kΩ Noise voltage NV (mV) 4 60 22kΩ 40 5kΩ Noise voltage NV (mV) 80 80 60 22kΩ 40 3 2 5kΩ 1 20 20 0 1 3 10 30 100 0 0.01 0 0.03 0.1 0.3 1 1 3 10 IC=1mA GV=80dB Function=FLAT Ta=25˚C 30 100 Collector to base voltage VCB (V) Collector current IC (mA) Collector to emitter voltage VCE (V) 2