2SD1119

Transistor 2SD1119 Silicon NPN epitaxial planer type For low-frequency power amplification Unit: mm s Features 2.6±0.1 4.5±0.1 1.6±0.2 1.5±0.1 q q q Low collector to emitter saturation voltage VCE(sat). Satisfactory operation performances at high efficiency with the low-voltage power supply. Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. 0.4max. 45° 1.0–0.2 +0.1 0.4±0.08 0.5±0.08 1.5±0.1 3.0±0.15 3 2 1 4.0–0.20 0.4±0.04 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature * (Ta=25˚C) Ratings 40 25 7 5 3 1 150 –55 ~ +150 1cm2 Unit V V V A A W ˚C ˚C 1:Base 2:Collector 3:Emitter EIAJ:SC–62 Mini Power Type Package marking Symbol VCBO VCEO VEBO ICP IC PC* Tj Tstg Marking symbol : T Printed circuit board: Copper foil area of thickness of 1.7mm for the collector portion or more, and the board s Electrical Characteristics Parameter Collector cutoff current Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Collector output capacitance (Ta=25˚C) Symbol ICBO VCEO VEBO hFE1 hFE2 VCE(sat) fT Cob *1 Conditions VCB = 10V, IE = 0 IC = 1mA, IB = 0 IE = 10µA, IC = 0 VCE = 2V, IC = 0.5A*2 VCE = 2V, IC = 2A*2 IC = 3A, IB = 0.1A*2 VCB = 6V, IE = –50mA, f = 200MHz VCB = 20V, IE = 0, f = 1MHz min typ max 0.1 2.5±0.1 +0.25 Unit µA V V 25 7 230 150 1 150 50 *2 600 V MHz pF Pulse measurement *1h FE1 Rank classification Rank hFE1 Marking Symbol Q 230 ~ 380 TQ R 340 ~ 600 TR 1 Transistor PC — Ta 1.2 2.4 Printed circut board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion. Ta=25˚C 2.0 IB=7mA 6mA 1.6 5mA 1.2 4mA 3mA 0.8 2mA 0.4 5 2SD1119 IC — VCE 6 VCE=2V 25˚C Ta=75˚C 4 –25˚C IC — VBE Collector power dissipation PC (W) 1.0 Collector current IC (A) 0.8 0.6 Collector current IC (A) 3 0.4 2 0.2 1mA 1 0 0 20 40 60 80 100 120 140 160 0 0 0.4 0.8 1.2 1.6 2.0 2.4 0 0 0.4 0.8 1.2 1.6 2.0 Ambient temperature Ta (˚C) Collector to emitter voltage VCE (V) Base to emitter voltage VBE (V) VCE(sat) — IC Collector to emitter saturation voltage VCE(sat) (V) 10 3 1 0.3 Ta=75˚C 0.1 0.03 0.01 0.003 0.001 0.01 0.03 25˚C –25˚C VBE(sat) — IC Base to emitter saturation voltage VBE(sat) (V) IC/IB=30 100 30 10 3 25˚C 1 0.3 0.1 0.03 0.01 0.01 0.03 Ta=–25˚C 75˚C IC/IB=30 600 hFE — IC VCE=2V Forward current transfer ratio hFE 500 400 Ta=75˚C 300 25˚C –25˚C 200 100 0.1 0.3 1 3 10 0.1 0.3 1 3 10 0 0.01 0.03 0.1 0.3 1 3 10 Collector current IC (A) Collector current IC (A) Collector current IC (A) fT — IE 400 350 300 250 200 150 100 50 0 – 0.01 – 0.03 – 0.1 – 0.3 100 Cob — VCB Collector output capacitance Cob (pF) VCB=6V Ta=25˚C IE=0 f=1MHz Ta=25˚C 80 Transition frequency fT (MHz) 60 40 20 0 –1 –3 –10 1 3 10 30 100 Emitter current IE (A) Collector to base voltage VCB (V) 2