2SD1199

Transistor 2SD1199 Silicon NPN epitaxial planer type For low-frequency amplification Unit: mm 6.9±0.1 1.5 2.5±0.1 1.0 s Features q q q q q 1.5 R0.9 R0.9 0.4 High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). High emitter to base voltage VEBO. Low noise voltage NV. M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. 2.4±0.2 2.0±0.2 3.5±0.1 1.0 0.45±0.05 1 1.0±0.1 R 0. 7 0.85 0.55±0.1 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg 3 2 (Ta=25˚C) Ratings 50 40 15 100 50 400 150 –55 ~ +150 Unit V V V mA mA mW ˚C ˚C 1:Base 2:Collector 3:Emitter 2.5 2.5 EIAJ:SC–71 M Type Mold Package s Electrical Characteristics Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Noise voltage (Ta=25˚C) Symbol ICBO ICEO VCBO VCEO VEBO hFE fT NV * Conditions VCB = 20V, IE = 0 VCE = 20V, IB = 0 IC = 10µA, IE = 0 IC = 1mA, IB = 0 IE = 10µA, IC = 0 VCE = 10V, IC = 2mA IC = 10mA, IB = 1mA VCB = 10V, IE = –2mA, f = 200MHz VCE = 10V, IC = 1mA, GV = 80dB Rg = 100kΩ, Function = FLAT min typ 1.25±0.05 max 100 1 4.1±0.2 4.5±0.1 Unit nA µA V V V 50 40 15 400 0.05 120 80 2000 0.2 VCE(sat) V MHz mV *h FE Rank classification R 400 ~ 800 S T hFE 600 ~ 1200 1000 ~ 2000 Rank 1 Transistor PC — Ta 500 160 Ta=25˚C 140 400 100 25˚C 2SD1199 IC — VCE 120 VCE=10V IC — VBE Collector power dissipation PC (mW) Collector current IC (mA) 120 100 80 60 40 20 IB=100µA 90µA 80µA 70µA 60µA 50µA 40µA 30µA 20µA 10µA Collector current IC (mA) Ta=75˚C 80 –25˚C 300 60 200 40 100 20 0 0 20 40 60 80 100 120 140 160 0 0 2 4 6 8 10 12 0 0 0.4 0.8 1.2 1.6 2.0 Ambient temperature Ta (˚C) Collector to emitter voltage VCE (V) Base to emitter voltage VBE (V) VCE(sat) — IC Collector to emitter saturation voltage VCE(sat) (V) 100 30 10 3 1 0.3 Ta=75˚C 0.1 0.03 0.01 0.1 25˚C –25˚C IC/IB=10 1800 hFE — IC 250 VCE=10V fT — I E VCB=10V Ta=25˚C Forward current transfer ratio hFE 1500 Transition frequency fT (MHz) 30 100 200 1200 Ta=75˚C 900 25˚C –25˚C 600 150 100 300 50 0.3 1 3 10 30 100 0 0.1 0.3 1 3 10 0 – 0.1 – 0.3 –1 –3 –10 –30 –100 Collector current IC (mA) Collector current IC (mA) Emitter current IE (mA) Cob — VCB 8 100 IE=0 f=1MHz Ta=25˚C NV — IC VCE=10V GV=80dB Function=FLAT Ta=25˚C Rg=100kΩ 60 22kΩ 40 5kΩ 20 100 NV — VCE Collector output capacitance Cob (pF) 7 6 5 4 3 2 1 0 1 3 10 Rg=100kΩ Noise voltage NV (mV) Noise voltage NV (mV) 80 80 60 22kΩ 40 5kΩ 20 30 100 0 0.01 0 0.03 0.1 0.3 1 1 3 10 IC=1mA GV=80dB Function=FLAT Ta=25˚C 30 100 Collector to base voltage VCB (V) Collector current IC (mA) Collector to emitter voltage VCE (V) 2