2SD1205A

Transistor 2SD1205, 2SD1205A Silicon NPN epitaxial planer type darlington For low-frequency amplification 6.9±0.1 0.4 Unit: mm 2.5±0.1 1.0 1.0 2.4±0.2 2.0±0.2 3.5±0.1 s Features q 1.5 1.5 R0.9 R0.9 q 0.85 0.55±0.1 1.25±0.05 0.45±0.05 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SD1205 2SD1205A 2SD1205 VCEO VEBO ICP IC PC Tj Tstg Symbol VCBO (Ta=25˚C) 3 2 1 Ratings 30 60 25 50 5 750 500 400 150 –55 ~ +150 Unit V 1:Base 2:Collector 3:Emitter 2.5 2.5 emitter voltage 2SD1205A Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature V V mA mA mW ˚C ˚C EIAJ:SC–71 M Type Mold Package Internal Connection C B ≈200Ω E s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Collector to base voltage Collector to emitter voltage 2SD1205 2SD1205A 2SD1205 2SD1205A (Ta=25˚C) Symbol ICBO IEBO VCBO VCEO VEBO hFE*1 VCE(sat) VBE(sat) fT Conditions VCB = 25V, IE = 0 VEB = 4V, IC = 0 IC = 100µA, IE = 0 IC = 1mA, IB = 0 IE = 100µA, IC = 0 VCE = 10V, IC = 500mA*2 IC = 500mA, IB = 0.5mA*2 IC = 500mA, IB = 0.5mA*2 VCB = 10V, IE = –50mA, f = 200MHz 150 *2 min typ max 100 100 4.1±0.2 q Forward current transfer ratio hFE is designed high, which is appropriate to the driver circuit of motors and printer bammer: hFE = 4000 to 2000. A shunt resistor is omitted from the driver. M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. 1.0±0.1 R 0. 4.5±0.1 7 Unit nA nA V 30 60 25 50 5 4000 20000 2.5 3 V V Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency *1h V V MHz Pulse measurement FE Rank classification Q R 4000 ~ 10000 8000 ~ 20000 Rank hFE 1 Transistor PC — Ta Collector to emitter saturation voltage VCE(sat) (V) 500 100 30 10 3 25˚C 1 –25˚C 0.3 0.1 0.03 0.01 0.01 0.03 Ta=75˚C 2SD1205, 2SD1205A VCE(sat) — IC Base to emitter saturation voltage VBE(sat) (V) IC/IB=1000 100 30 10 3 Ta=–25˚C 1 0.3 0.1 0.03 0.01 0.01 0.03 75˚C 25˚C VBE(sat) — IC IC/IB=1000 Collector power dissipation PC (mW) 400 300 200 100 0 0 20 40 60 80 100 120 140 160 0.1 0.3 1 3 10 0.1 0.3 1 3 10 Ambient temperature Ta (˚C) Collector current IC (A) Collector current IC (A) hFE — IC 105 Cob — VCB Collector output capacitance Cob (pF) VCE=10V 8 7 6 5 4 3 2 1 0 IE=0 f=1MHz Ta=25˚C Forward current transfer ratio hFE Ta=75˚C 104 25˚C –25˚C 103 102 10 0.01 0.03 0.1 0.3 1 3 10 1 3 10 30 100 Collector current IC (A) Collector to base voltage VCB (V) 2