2SD1250

Power Transistors 2SD1250, 2SD1250A Silicon NPN triple diffusion planar type For power amplification For TV vartical deflection output Complementary to 2SB928 and 2SB928A 8.5±0.2 6.0±0.5 3.4±0.3 Unit: mm 1.0±0.1 10.0±0.3 s Features q q q 1.5±0.1 High forward current transfer ratio hFE which has satisfactory linearity Low collector to emitter saturation voltage VCE(sat) N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. (TC=25˚C) Ratings 200 200 150 180 6 3 2 30 1.3 150 –55 to +150 Unit V 1.5max. 1.1max. 10.5min. 2.0 0.8±0.1 0.5max. 2.54±0.3 5.08±0.5 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SD1250 2SD1250A 2SD1250 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg 1 2 3 1:Base 2:Collector 3:Emitter N Type Package Unit: mm 3.4±0.3 1.0±0.1 8.5±0.2 6.0±0.3 1.5–0.4 Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature V 2.0 3.0–0.2 A A W ˚C ˚C 4.4±0.5 0.8±0.1 2.54±0.3 R0.5 R0.5 1.1 max. 0 to 0.4 5.08±0.5 1 2 3 1:Base 2:Collector 3:Emitter N Type Package (DS) s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Collector to base voltage Collector to emitter voltage 2SD1250 2SD1250A (TC=25˚C) Symbol ICBO IEBO VCBO VCEO VEBO hFE1 hFE2 VBE VCE(sat) fT * Conditions VCB = 200V, IE = 0 VEB = 4V, IC = 0 IC = 500µA, IE = 0 IC = 5mA, IB = 0 IE = 500µA, IC = 0 VCE = 10V, IC = 150mA VCE = 10V, IC = 400mA VCE = 10V, IC = 400mA IC = 500mA, IB = 50mA VCE = 10V, IC = 0.5A, f = 1MHz min typ max 50 50 4.4±0.5 Unit µA µA V V V 200 150 180 6 60 50 1 1 20 240 Emitter to base voltage Forward current transfer ratio Base to emitter voltage Collector to emitter saturation voltage Transition frequency *h V V MHz FE1 Rank classification Q 60 to 140 P 100 to 240 Rank hFE1 14.7±0.5 emitter voltage 2SD1250A 10.0±0.3 V +0.4 +0 1 Power Transistors PC — Ta 50 1.2 (1) TC=Ta (2) With a 50 × 50 × 2mm Al heat sink (3) Without heat sink (PC=1.3W) (1) TC=25˚C 1.0 IB=7mA 2SD1250, 2SD1250A IC — VCE 1.2 IC — VBE Collector power dissipation PC (W) Collector current IC (A) 0.8 Collector current IC (A) 40 1.0 TC=100˚C 0.8 25˚C –25˚C 6mA 5mA 4mA 0.6 3mA 0.4 2mA 0.2 30 0.6 20 0.4 10 (2) (3) 0 0 20 40 60 80 100 120 140 160 1mA 0.2 0 0 4 8 12 16 20 24 0 0 0.2 0.4 0.6 0.8 1.0 1.2 Ambient temperature Ta (˚C) Collector to emitter voltage VCE (V) Base to emitter voltage VBE (V) VCE(sat) — IC Collector to emitter saturation voltage VCE(sat) (V) 10 IC/IB=10 10000 hFE — IC 1000 VCE=10V 300 100 30 10 3 1 0.3 0.1 0.01 0.03 fT — IC VCE=10V f=1MHz TC=25˚C Forward current transfer ratio hFE 3 1000 300 100 –25˚C 30 10 3 1 0.01 0.03 TC=100˚C 25˚C 1 TC=100˚C 0.3 25˚C –25˚C 0.1 0.03 0.01 0.01 0.03 0.1 0.3 1 0.1 0.3 1 3 10 Transition frequency fT (MHz) 3000 0.1 0.3 1 3 10 Collector current IC (A) Collector current IC (A) Collector current IC (A) Area of safe operation (ASO) 10 3 ICP IC 5ms 1ms 1s 0.1 0.03 0.01 0.003 0.001 1 3 10 30 Non repetitive pulse TC=25˚C 103 Rth(t) — t (1) Without heat sink (2) With a 50 × 50 × 2mm Al heat sink (1) (2) 10 Thermal resistance Rth(t) (˚C/W) Collector current IC (A) 1 0.3 t=0.5ms 102 1 2SD1250A 2SD1250 10–1 100 300 1000 10–2 10–4 10–3 10–2 10–1 1 10 102 103 104 Collector to emitter voltage VCE (V) Time t (s) 2