2SD1251

Power Transistors 2SD1251, 2SD1251A Silicon NPN triple diffusion junction type For power amplification 1.5±0.1 8.5±0.2 6.0±0.5 3.4±0.3 Unit: mm 1.0±0.1 s Features q q 10.5min. Wide area of safe operation (ASO) N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. (TC=25˚C) Ratings 60 80 60 80 8 6 4 1 30 1.3 150 –55 to +150 Unit V 10.0±0.3 1.5max. 1.1max. 2.0 0.8±0.1 0.5max. s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SD1251 2SD1251A 2SD1251 Symbol VCBO VCEO VEBO ICP IC IB Ta=25°C PC Tj Tstg 2.54±0.3 5.08±0.5 1 2 3 1:Base 2:Collector 3:Emitter N Type Package Unit: mm 3.4±0.3 1.0±0.1 emitter voltage 2SD1251A Emitter to base voltage Peak collector current Collector current Base current Collector power TC=25°C dissipation Junction temperature Storage temperature V V 8.5±0.2 6.0±0.3 1.5–0.4 A 2.0 3.0–0.2 A W 4.4±0.5 0.8±0.1 2.54±0.3 R0.5 R0.5 1.1 max. 0 to 0.4 5.08±0.5 ˚C ˚C 1 2 3 1:Base 2:Collector 3:Emitter N Type Package (DS) s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage 2SD1251 2SD1251A (TC=25˚C) Symbol ICBO IEBO VCEO(sus)*2 hFE1 hFE2*1 VBE VCE(sat) fT Conditions VCB = 20V, IE = 0 VEB = 8V, IC = 0 IC = 0.2A, L = 25mH VCE = 3V, IC = 0.1A VCE = 3V, IC = 1A VCE = 3V, IC = 1A IC = 2A, IB = 0.4A VCE = 10V, IC = 0.2A, f = 0.5MHz *2V CEO(sus) min typ max 30 1 4.4±0.5 Unit µA mA V 60 80 40 30 160 1.2 1 1 Forward current transfer ratio Base to emitter voltage Collector to emitter saturation voltage Transition frequency *1h FE2 V V MHz Rank classification Q 30 to 60 P 50 to 100 O 80 to 160 Test circuit X IC(A) 0.2 L 25mH Rank hFE2 50/60Hz mercury relay 120Ω 6V 1Ω Y 15V G 0.1 60/80 VCE(V) Note: Ordering can be made by the common rank (OP rank hFE2 = 50 to 160) in the rank classification. 14.7±0.5 A 10.0±0.3 +0.4 +0 1 Power Transistors PC — Ta 50 2.4 (1) TC=Ta (2) With a 50 × 50 × 2mm Al heat sink (3) Without heat sink (PC=1.3W) (1) TC=25˚C 2.0 IB=35mA 30mA 1..6 25mA 20mA 15mA 1.2 10mA 0.8 2SD1251, 2SD1251A IC — VCE 3.2 25˚C 2.8 TC=100˚C –25˚C VCE=3V IC — VBE Collector power dissipation PC (W) Collector current IC (A) Collector current IC (A) 12 40 2.4 2.0 1.6 1.2 0.8 0.4 30 20 5mA 10 (2) (3) 0 0 20 40 60 80 100 120 140 160 0.4 0 0 2 4 6 8 10 0 0 0.4 0.8 1.2 1.6 2.0 2.4 Ambient temperature Ta (˚C) Collector to emitter voltage VCE (V) Base to emitter voltage VBE (V) VCE(sat) — IC Collector to emitter saturation voltage VCE(sat) (V) 30 10 IC/IB=5 TC=25˚C 10000 hFE — IC 10000 Cob — VCB Collector output capacitance Cob (pF) VCE=3V IE=0 f=1MHz TC=25˚C Forward current transfer ratio hFE 3000 3000 1000 300 100 30 10 3 1 0.1 3 1 TC=100˚C 0.3 0.1 25˚C –25˚C 1000 TC=100˚C 300 100 30 10 3 1 0.01 0.03 25˚C –25˚C 0.03 0.01 0.01 0.03 0.1 0.3 1 3 0.1 0.3 1 3 10 0.3 1 3 10 30 100 Collector current IC (A) Collector current IC (A) Collector to base voltage VCB (V) Area of safe operation (ASO) 100 30 103 Non repetitive pulse TC=25˚C Rth(t) — t (1) Without heat sink (2) With a 50 × 50 × 2mm Al heat sink (1) (2) 10 Thermal resistance Rth(t) (˚C/W) Collector current IC (A) 102 10 I CP 3 IC 1 0.3 0.1 0.03 0.01 1 3 10 30 10ms 300ms t=5ms 1 2SD1251A 2SD1251 10–1 100 300 1000 10–2 10–4 10–3 10–2 10–1 1 10 102 103 104 Collector to emitter voltage VCE (V) Time t (s) 2