2SD1253

Power Transistors 2SD1253, 2SD1253A Silicon NPN triple diffusion planar type For power amplification Complementary to 2SB930 and 2SB930A 10.0±0.3 8.5±0.2 6.0±0.5 3.4±0.3 Unit: mm 1.0±0.1 s Features q q q High forward current transfer ratio hFE which has satisfactory linearity Low collector to emitter saturation voltage VCE(sat) N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. (TC=25˚C) Ratings 60 80 60 80 5 8 4 40 1.3 150 –55 to +150 Unit V 1.5±0.1 1.5max. 10.5min. 2.0 1.1max. 0.8±0.1 0.5max. s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SD1253 2SD1253A 2SD1253 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg 2.54±0.3 5.08±0.5 1 2 3 1:Base 2:Collector 3:Emitter N Type Package Unit: mm 3.4±0.3 1.0±0.1 8.5±0.2 6.0±0.3 emitter voltage 2SD1253A Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature V 14.7±0.5 4.4±0.5 0 to 0.4 1.5–0.4 V A A W ˚C ˚C 10.0±0.3 4.4±0.5 2.0 0.8±0.1 2.54±0.3 R0.5 R0.5 1.1 max. 5.08±0.5 1 2 3 1:Base 2:Collector 3:Emitter N Type Package (DS) s Electrical Characteristics Parameter Collector cutoff current Collector cutoff current Emitter cutoff current Collector to emitter voltage 2SD1253 2SD1253A 2SD1253 2SD1253A 2SD1253 2SD1253A (TC=25˚C) Symbol ICES ICEO IEBO VCEO hFE1* hFE2 VBE VCE(sat) fT ton tstg tf Conditions VCE = 60V, VBE = 0 VCE = 80V, VBE = 0 VCE = 30V, IB = 0 VCE = 60V, IB = 0 VEB = 5V, IC = 0 IC = 30mA, IB = 0 VCE = 4V, IC = 1A VCE = 4V, IC = 3A VCE = 4V, IC = 3A IC = 4A, IB = 0.4A VCE = 5V, IC = 0.5A, f = 1MHz IC = 4A, IB1 = 0.4A, IB2 = – 0.4A, VCC = 50V 20 0.4 1.2 0.5 60 80 40 15 2 1.5 V V MHz µs µs µs 250 min typ max 400 400 700 700 1 Unit µA µA mA V Forward current transfer ratio Base to emitter voltage Collector to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time *h FE1 Rank classification R 40 to 90 Q 70 to 150 P 120 to 250 Rank hFE1 3.0–0.2 +0.4 +0 1 Power Transistors PC — Ta 50 6 (1) TC=Ta (2) With a 50 × 50 × 2mm Al heat sink (3) Without heat sink (PC=1.3W) TC=25˚C 5 IB=150mA 2SD1253, 2SD1253A IC — VCE 8 VCE=4V 7 25˚C TC=100˚C –25˚C IC — VBE Collector power dissipation PC (W) Collector current IC (A) Collector current IC (A) 20 40 (1) 100mA 4 80mA 60mA 3 40mA 30mA 2 20mA 10mA 1 5mA 0 6 5 4 3 2 1 0 30 20 10 (2) (3) 0 0 20 40 60 80 100 120 140 160 0 4 8 12 16 0 0.4 0.8 1.2 1.6 2.0 2.4 Ambient temperature Ta (˚C) Collector to emitter voltage VCE (V) Base to emitter voltage VBE (V) VCE(sat) — IC Collector to emitter saturation voltage VCE(sat) (V) 100 IC/IB=10 30 10 3 1 0.3 0.1 0.03 0.01 0.01 0.03 TC=100˚C 10000 hFE — IC 10000 VCE=4V 3000 1000 300 100 30 10 3 1 0.01 0.03 fT — IC VCE=10V f=1MHz TC=25˚C Forward current transfer ratio hFE 1000 300 100 –25˚C 30 10 3 1 0.01 0.03 25˚C TC=100˚C 25˚C –25˚C 0.1 0.3 1 3 10 0.1 0.3 1 3 10 Transition frequency fT (MHz) 3000 0.1 0.3 1 3 10 Collector current IC (A) Collector current IC (A) Collector current IC (A) Area of safe operation (ASO) 100 30 103 Non repetitive pulse TC=25˚C t=10ms Rth(t) — t (1) Without heat sink (2) With a 50 × 50 × 2mm Al heat sink (1) (2) 10 Thermal resistance Rth(t) (˚C/W) Collector current IC (A) 10 ICP IC 3 1 0.3 0.1 0.03 0.01 1 3 10 30 300ms 102 1ms 1 2SD1253A 2SD1253 10–1 100 300 1000 10–2 10–4 10–3 10–2 10–1 1 10 102 103 104 Collector to emitter voltage VCE (V) Time t (s) 2