2SD1253A

Power Transistors 2SB930, 2SB930A Silicon PNP epitaxial planar type 10.0±0.3 1.5±0.1 8.5±0.2 6.0±0.5 3.4±0.3 Unit: mm 1.0±0.1 For power amplification Complementary to 2SD1253 and 2SD1253A s Features q q q High forward current transfer ratio hFE which has satisfactory linearity Low collector to emitter saturation voltage VCE(sat) N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. 1.5max. 1.1max. 10.5min. 2.0 0.8±0.1 0.5max. 2.54±0.3 5.08±0.5 1 2 3 s Absolute Maximum Ratings (TC=25˚C) Parameter Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Ratings –60 –80 –60 –80 –5 –8 –4 40 1.3 150 –55 to +150 Unit V 2SB930 2SB930A 2SB930 Collector to base voltage Collector to 1:Base 2:Collector 3:Emitter N Type Package Unit: mm 3.4±0.3 1.0±0.1 8.5±0.2 6.0±0.3 emitter voltage 2SB930A Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature V 14.7±0.5 4.4±0.5 0 to 0.4 V A A W ˚C ˚C 10.0±0.3 1.5–0.4 4.4±0.5 2.0 0.8±0.1 2.54±0.3 R0.5 R0.5 1.1 max. 5.08±0.5 1 2 3 s Electrical Characteristics Parameter Collector cutoff current Collector cutoff current Emitter cutoff current Collector to emitter voltage 2SB930 2SB930A 2SB930 2SB930A 2SB930 2SB930A (TC=25˚C) Symbol ICES ICEO IEBO VCEO hFE1* hFE2 VBE VCE(sat) fT ton tstg tf IC = –4A, IB1 = – 0.4A, IB2 = 0.4A Conditions VCE = –60V, VBE = 0 VCE = –80V, VBE = 0 VCE = –30V, IB = 0 VCE = –60V, IB = 0 VEB = –5V, IC = 0 IC = –30mA, IB = 0 VCE = –4V, IC = –1A VCE = –4V, IC = –3A VCE = –4V, IC = –3A IC = –4A, IB = – 0.4A VCE = –10V, IC = – 0.1A, f = 1MHz 20 0.2 0.5 0.2 –60 –80 70 15 min typ 1:Base 2:Collector 3:Emitter N Type Package (DS) max –400 –400 –700 –700 –1 3.0–0.2 +0.4 +0 Unit µA µA mA V Forward current transfer ratio Base to emitter voltage Collector to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time *h FE1 250 –2 –1.5 V V MHz µs µs µs Rank classification Q 70 to 150 P 120 to 250 Rank hFE1 1 Power Transistors PC — Ta 50 –6 (1) TC=Ta (2) With a 50 × 50 × 2mm Al heat sink (3) Without heat sink (PC=1.3W) IB=–120mA –5 TC=25˚C 2SB930, 2SB930A IC — VCE –10 VCE=–4V IC — VBE Collector power dissipation PC (W) 45 40 35 30 25 20 15 10 5 0 0 20 40 (2) (3) (1) –100mA –80mA Collector current IC (A) –4 Collector current IC (A) –8 –60mA –6 25˚C TC=100˚C –25˚C –3 –40mA –20mA –10mA –4 –2 –1 –8mA –5mA –2 0 60 80 100 120 140 160 0 –2 –4 –6 –8 –10 –12 0 0 – 0.4 – 0.8 –1.2 –1.6 –2.0 Ambient temperature Ta (˚C) Collector to emitter voltage VCE (V) Base to emitter voltage VBE (V) VCE(sat) — IC Collector to emitter saturation voltage VCE(sat) (V) –100 IC/IB=10 –30 –10 –3 –1 25˚C TC=100˚C –25˚C 10000 hFE — IC 10000 VCE=–4V 3000 1000 300 100 30 10 3 fT — IC VCE=–5V f=1MHz TC=25˚C Forward current transfer ratio hFE 1000 25˚C 300 100 30 10 3 1 – 0.01 – 0.03 – 0.1 – 0.3 TC=100˚C –25˚C – 0.3 – 0.1 – 0.03 – 0.01 – 0.01 – 0.03 – 0.1 – 0.3 Transition frequency fT (MHz) –1 –3 –10 3000 –1 –3 –10 1 – 0.01 – 0.03 – 0.1 – 0.3 –1 –3 –10 Collector current IC (A) Collector current IC (A) Collector current IC (A) Area of safe operation (ASO) –100 –30 103 Non repetitive pulse TC=25˚C ICP IC 10ms –1 300ms t=1ms Rth(t) — t (1) Without heat sink (2) With a 50 × 50 × 2mm Al heat sink (1) (2) 10 Thermal resistance Rth(t) (˚C/W) Collector current IC (A) 102 –10 –3 – 0.3 – 0.1 – 0.03 – 0.01 –1 1 10–1 –3 –10 –30 –100 –300 –1000 10–2 10–4 10–3 10–2 10–1 1 10 102 103 104 Collector to emitter voltage VCE (V) Time t (s) 2