2SD1259

Power Transistors 2SD1259, 2SD1259A Silicon NPN triple diffusion planar type For power amplification with high forward current transfer ratio 10.0±0.3 8.5±0.2 6.0±0.5 3.4±0.3 Unit: mm 1.0±0.1 s Features q q q High foward current transfer ratio hFE Satisfactory linearity of foward current transfer ratio hFE N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. (TC=25˚C) Ratings 80 100 60 80 6 6 3 1 40 1.3 150 –55 to +150 Unit V 1.5±0.1 1.5max. 1.1max. 10.5min. 2.0 0.8±0.1 0.5max. 2.54±0.3 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SD1259 2SD1259A 2SD1259 Symbol VCBO VCEO VEBO ICP IC IB Ta=25°C PC Tj Tstg 5.08±0.5 1 2 3 1:Base 2:Collector 3:Emitter N Type Package Unit: mm 3.4±0.3 1.0±0.1 8.5±0.2 6.0±0.3 1.5–0.4 Peak collector current Collector current Base current Collector power TC=25°C dissipation Junction temperature Storage temperature A 2.0 3.0–0.2 A A 4.4±0.5 0.8±0.1 2.54±0.3 R0.5 R0.5 1.1 max. 0 to 0.4 5.08±0.5 W 1 2 3 ˚C ˚C 1:Base 2:Collector 3:Emitter N Type Package (DS) s Electrical Characteristics Parameter Collector cutoff current 2SD1259 2SD1259A (TC=25˚C) Symbol ICES ICEO IEBO Conditions VCE = 80V, IE = 0 VCE = 100V, IE = 0 VCE = 40V, IB = 0 VCB = 6V, IC = 0 IC = 25mA, IB = 0 VCE = 4V, IC = 0.5A IC = 2A, IB = 0.05A VCE = 12V, IC = 0.2A, f = 10MHz 50 60 80 500 2500 1 V MHz min typ max 100 100 100 100 Unit µA µA µA V Collector cutoff current Emitter cutoff current Collector to emitter voltage 2SD1259 2SD1259A VCEO hFE* VCE(sat) fT Forward current transfer ratio Collector to emitter saturation voltage Transition frequency *h FE Rank classification Q P O hFE 500 to 1000 800 to 1500 1200 to 2500 Rank Note: Ordering can be made by the common rank (PQ rank hFE = 500 to 1500) in the rank classification. 4.4±0.5 14.7±0.5 Emitter to base voltage V 10.0±0.3 emitter voltage 2SD1259A V +0.4 +0 1 Power Transistors PC — Ta 50 1.0 (1) TC=Ta (2) With a 50 × 50 × 2mm Al heat sink (3) Without heat sink (PC=1.3W) IB=1.2mA 1.0mA TC=25˚C 2SD1259, 2SD1259A IC — VCE 5 IC — VBE Collector power dissipation PC (W) Collector current IC (A) 0.7mA 0.6mA 0.6 0.5mA 0.4mA 0.4 0.3mA 0.2mA 0.2 0.1mA 0 Collector current IC (A) 40 (1) 0.8 4 25˚C TC=100˚C 3 –25˚C 30 20 2 10 (2) (3) 0 0 20 40 60 80 100 120 140 160 1 0 0 2 4 6 8 10 12 0 0.2 0.4 0.6 0.8 1.0 1.2 Ambient temperature Ta (˚C) Collector to emitter voltage VCE (V) Base to emitter voltage VBE (V) VCE(sat) — IC Collector to emitter saturation voltage VCE(sat) (V) 100 IC/IB=40 30 10 3 1 0.3 0.1 0.03 0.01 0.01 0.03 TC=100˚C 25˚C –25˚C 10000 hFE — IC 10000 VCE=4V 3000 1000 300 100 30 10 3 1 0.01 0.03 fT — IC VCE=12V f=10MHz TC=25˚C Forward current transfer ratio hFE 1000 –25˚C 25˚C 300 100 30 10 3 1 0.01 0.03 0.1 0.3 1 3 10 0.1 0.3 1 3 10 Transition frequency fT (MHz) 3000 TC=100˚C 0.1 0.3 1 3 10 Collector current IC (A) Collector current IC (A) Collector current IC (A) Area of safe operation (ASO) 100 30 103 Non repetitive pulse TC=25˚C Rth(t) — t (1) Without heat sink (2) With a 50 × 50 × 2mm Al heat sink (1) (2) 10 Thermal resistance Rth(t) (˚C/W) Collector current IC (A) 102 10 I CP 3 1 0.3 0.1 0.03 0.01 1 3 10 30 t=1ms 10ms 300ms IC 1 2SD1259A 2SD1259 10–1 100 300 1000 10–2 10–4 10–3 10–2 10–1 1 10 102 103 104 Collector to emitter voltage VCE (V) Time t (s) 2