Power Transistors
2SD1261, 2SD1261A
Silicon NPN triple diffusion planar type Darlington
For power amplification Complementary to 2SB938 and 2SB938A
10.0±0.3
8.5±0.2 6.0±0.5
3.4±0.3
Unit: mm
1.0±0.1
q q q
High foward current transfer ratio hFE High-speed switching N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. (TC=25˚C)
Ratings 60 80 60 80 5 8 4 40 1.3 150 –55 to +150 Unit V
1.5±0.1
s Features
1.5max.
10.5min. 2.0
1.1max.
0.8±0.1
0.5max.
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to 2SD1261 2SD1261A 2SD1261 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
2.54±0.3 5.08±0.5 1 2 3
1:Base 2:Collector 3:Emitter N Type Package Unit: mm
3.4±0.3 1.0±0.1
8.5±0.2
emitter voltage 2SD1261A Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature
V
10.0±0.3
6.0±0.3
V A A W
1.5–0.4
2.0
3.0–0.2
4.4±0.5
0.8±0.1 2.54±0.3
R0.5 R0.5 1.1 max.
0 to 0.4
5.08±0.5
˚C ˚C
1 2 3
s Electrical Characteristics
Parameter Collector cutoff current Collector cutoff current Emitter cutoff current Collector to emitter voltage 2SD1261 2SD1261A 2SD1261 2SD1261A 2SD1261 2SD1261A
(TC=25˚C)
Symbol ICBO ICEO IEBO VCEO hFE1 hFE2 VBE VCE(sat) fT ton tstg tf
*
1:Base 2:Collector 3:Emitter N Type Package (DS)
Conditions VCB = 60V, IE = 0 VCB = 80V, IE = 0 VCE = 30V, IB = 0 VCE = 40V, IB = 0 VEB = 5V, IC = 0 IC = 30mA, IB = 0 VCE = 3V, IC = 0.5A VCE = 3V, IC = 3A VCE = 3V, IC = 3A IC = 3A, IB = 12mA IC = 5A, IB = 20mA VCE = 10V, IC = 0.5A, f = 1MHz IC = 3A, IB1 = 12mA, IB2 = –12mA, VCC = 50V
min
typ
max 200 200 500 500 2
4.4±0.5
60 80 1000 1000 10000 2.5 2 4 20 0.5 4 1
14.7±0.5
+0.4
+0
Unit µA µA mA V
Forward current transfer ratio Base to emitter voltage Collector to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time
*h FE2
V V MHz µs µs µs
Rank classification
R Q P 1000 to 2500 2000 to 5000 4000 to 10000
Internal Connection
B
C
Rank hFE2
E
1
Power Transistors
PC — Ta
50 10 (1) TC=Ta (2) With a 50 × 50 × 2mm Al heat sink (3) Without heat sink (PC=1.3W) TC=25˚C IB=4.0mA
2SD1261, 2SD1261A
IC — VCE
10 VCE=3V
IC — VBE
Collector power dissipation PC (W)
Collector current IC (A)
Collector current IC (A)
40
(1)
8
30
6
3.5mA 3.0mA 2.5mA 2.0mA 1.5mA 1.0mA 0.5mA
8 25˚C 6 TC=100˚C –25˚C
20
4
4
10 (2) (3) 0 0 20 40 60 80 100 120 140 160
2
2
0 0 2 4 6 8 10
0 0 0.8 1.6 2.4 3.2
Ambient temperature Ta (˚C)
Collector to emitter voltage VCE (V)
Base to emitter voltage VBE (V)
VCE(sat) — IC
Collector to emitter saturation voltage VCE(sat) (V)
100 IC/IB=250 30 10 3 1 0.3 0.1 0.03 0.01 0.01 0.03 TC=100˚C –25˚C 25˚C 105
hFE — IC
10000
Cob — VCB
Collector output capacitance Cob (pF)
VCE=3V IE=0 f=1MHz TC=25˚C
Forward current transfer ratio hFE
3000 1000 300 100 30 10 3 1 0.1
104 TC=100˚C
103 25˚C –25˚C 102
0.1
0.3
1
3
10
10 0.01 0.03
0.1
0.3
1
3
10
0.3
1
3
10
30
100
Collector current IC (A)
Collector current IC (A)
Collector to base voltage VCB (V)
Area of safe operation (ASO)
100 30 103 Non repetitive pulse TC=25˚C t=10ms
Rth(t) — t
(1) Without heat sink (2) With a 50 × 50 × 2mm Al heat sink (1) (2) 10
Thermal resistance Rth(t) (˚C/W)
Collector current IC (A)
10 ICP IC 3 1 0.3 0.1 0.03 0.01 1 3 10 30 300ms
102
1ms
1
2SD1261A
2SD1261
10–1
100
300
1000
10–2 10–4
10–3
10–2
10–1
1
10
102
103
104
Collector to emitter voltage VCE
(V)
Time t (s)
2
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