Power Transistors
2SD1263, 2SD1263A
Silicon NPN triple diffusion planar type
For power amplification
Unit: mm
s
q q
Features
High collector to base voltage VCBO Full-pack package which can be installed to the heat sink with one screw
0.7±0.1
10.0±0.2 5.5±0.2 2.7±0.2 4.2±0.2 φ3.1±0.1 1.4±0.1
4.2±0.2
s
Absolute Maximum Ratings (TC=25˚C)
Parameter Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Ratings 350 400 250 300 5 1.5 0.75 35 2 150 –55 to +150 Unit V 2SD1263 2SD1263A 2SD1263
14.0±0.5
base voltage Collector to
Solder Dip
4.0
Collector to
16.7±0.3
7.5±0.2
1.3±0.2
emitter voltage 2SD1263A Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature
V V A A W ˚C ˚C
0.8±0.1
0.5 +0.2 –0.1
2.54±0.25 5.08±0.5 1 2 3
1:Base 2:Collector 3:Emitter TO–220 Full Pack Package(a)
s Electrical Characteristics
Parameter Collector cutoff current Collector cutoff current Emitter cutoff current Collector to emitter voltage 2SD1263 2SD1263A 2SD1263 2SD1263A 2SD1263 2SD1263A
(TC=25˚C)
Symbol ICES ICEO IEBO VCEO hFE1* hFE2 VBE VCE(sat) fT ton tstg tf Conditions VCE = 350V, VBE = 0 VCE = 400V, VBE = 0 VCE = 150V, IB = 0 VCE = 200V, IB = 0 VEB = 5V, IC = 0 IC = 30mA, IB = 0 VCE = 10V, IC = 0.3A VCE = 10V, IC = 1A VCE = 10V, IC = 1A IC = 1A, IB = 0.2A VCE = 5V, IC = 0.5A, f = 10MHz IC = 1A, IB1 = 0.1A, IB2 = – 0.1A, VCC = 50V 30 0.5 2 0.5 250 300 70 10 1.5 1 V V MHz µs µs µs 250 min typ max 1 1 1 1 1 Unit mA
mA mA V
Forward current transfer ratio Base to emitter voltage Collector to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time
*h FE1
Rank classification
Q 70 to 150 P 120 to 250
Rank hFE1
1
Power Transistors
PC — Ta
50 1.2 (1) TC=Ta (2) With a 100 × 100 × 2mm Al heat sink (3) With a 50 × 50 × 2mm Al heat sink (4) Without heat sink (PC=2W) TC=25˚C 1.0
2SD1263, 2SD1263A
IC — VCE
4.0 VCE=10V
IC — VBE
Collector power dissipation PC (W)
Collector current IC (A)
(1) 30
0.8
IB=14mA 12mA 10mA 8mA 6mA
Collector current IC (A)
40
3.2
25˚C TC=100˚C –25˚C
2.4
0.6
20
1.6
0.4
4mA
10
(2) (3) (4)
0.2
2mA
0.8
0 0 20 40 60 80 100 120 140 160
0 0 2 4 6 8 10 12
0 0 0.4 0.8 1.2 1.6 2.0 2.4
Ambient temperature Ta (˚C)
Collector to emitter voltage VCE (V)
Base to emitter voltage VBE (V)
VCE(sat) — IC
Collector to emitter saturation voltage VCE(sat) (V)
10000 10 IC/IB=10
hFE — IC
1000 VCE=10V 300 100 30 10 3 1 0.3 0.1 0.001 0.003
fT — IC
VCE=10V f=10MHz TC=25˚C
Forward current transfer ratio hFE
TC=100˚C 3
1000 300 100 30 10 3 1 0.01 0.03
1
TC=100˚C 25˚C –25˚C
0.3
25˚C –25˚C
0.1
0.03
0.01 0.01
0.03
0.1
0.3
1
3
0.1
0.3
1
3
10
Transition frequency fT (MHz)
3000
0.01 0.03
0.1
0.3
1
Collector current IC (A)
Collector current IC (A)
Collector current IC (A)
Area of safe operation (ASO)
10 3 103 Non repetitive pulse TC=25˚C ICP t=1ms IC 0.3 0.1 0.03 0.01 0.003 0.001 1 3 10 30 100 10ms DC
Rth(t) — t
(1) Without heat sink (2) With a 100 × 100 × 2mm Al heat sink (1)
Thermal resistance Rth(t) (˚C/W)
Collector current IC (A)
102
1
10
(2)
1
2SD1263A
2SD1263
10–1
300
1000
10–2 10–4
10–3
10–2
10–1
1
10
102
103
104
Collector to emitter voltage VCE
(V)
Time t (s)
2
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