2SD1263

Power Transistors 2SD1263, 2SD1263A Silicon NPN triple diffusion planar type For power amplification Unit: mm s q q Features High collector to base voltage VCBO Full-pack package which can be installed to the heat sink with one screw 0.7±0.1 10.0±0.2 5.5±0.2 2.7±0.2 4.2±0.2 φ3.1±0.1 1.4±0.1 4.2±0.2 s Absolute Maximum Ratings (TC=25˚C) Parameter Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Ratings 350 400 250 300 5 1.5 0.75 35 2 150 –55 to +150 Unit V 2SD1263 2SD1263A 2SD1263 14.0±0.5 base voltage Collector to Solder Dip 4.0 Collector to 16.7±0.3 7.5±0.2 1.3±0.2 emitter voltage 2SD1263A Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature V V A A W ˚C ˚C 0.8±0.1 0.5 +0.2 –0.1 2.54±0.25 5.08±0.5 1 2 3 1:Base 2:Collector 3:Emitter TO–220 Full Pack Package(a) s Electrical Characteristics Parameter Collector cutoff current Collector cutoff current Emitter cutoff current Collector to emitter voltage 2SD1263 2SD1263A 2SD1263 2SD1263A 2SD1263 2SD1263A (TC=25˚C) Symbol ICES ICEO IEBO VCEO hFE1* hFE2 VBE VCE(sat) fT ton tstg tf Conditions VCE = 350V, VBE = 0 VCE = 400V, VBE = 0 VCE = 150V, IB = 0 VCE = 200V, IB = 0 VEB = 5V, IC = 0 IC = 30mA, IB = 0 VCE = 10V, IC = 0.3A VCE = 10V, IC = 1A VCE = 10V, IC = 1A IC = 1A, IB = 0.2A VCE = 5V, IC = 0.5A, f = 10MHz IC = 1A, IB1 = 0.1A, IB2 = – 0.1A, VCC = 50V 30 0.5 2 0.5 250 300 70 10 1.5 1 V V MHz µs µs µs 250 min typ max 1 1 1 1 1 Unit mA mA mA V Forward current transfer ratio Base to emitter voltage Collector to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time *h FE1 Rank classification Q 70 to 150 P 120 to 250 Rank hFE1 1 Power Transistors PC — Ta 50 1.2 (1) TC=Ta (2) With a 100 × 100 × 2mm Al heat sink (3) With a 50 × 50 × 2mm Al heat sink (4) Without heat sink (PC=2W) TC=25˚C 1.0 2SD1263, 2SD1263A IC — VCE 4.0 VCE=10V IC — VBE Collector power dissipation PC (W) Collector current IC (A) (1) 30 0.8 IB=14mA 12mA 10mA 8mA 6mA Collector current IC (A) 40 3.2 25˚C TC=100˚C –25˚C 2.4 0.6 20 1.6 0.4 4mA 10 (2) (3) (4) 0.2 2mA 0.8 0 0 20 40 60 80 100 120 140 160 0 0 2 4 6 8 10 12 0 0 0.4 0.8 1.2 1.6 2.0 2.4 Ambient temperature Ta (˚C) Collector to emitter voltage VCE (V) Base to emitter voltage VBE (V) VCE(sat) — IC Collector to emitter saturation voltage VCE(sat) (V) 10000 10 IC/IB=10 hFE — IC 1000 VCE=10V 300 100 30 10 3 1 0.3 0.1 0.001 0.003 fT — IC VCE=10V f=10MHz TC=25˚C Forward current transfer ratio hFE TC=100˚C 3 1000 300 100 30 10 3 1 0.01 0.03 1 TC=100˚C 25˚C –25˚C 0.3 25˚C –25˚C 0.1 0.03 0.01 0.01 0.03 0.1 0.3 1 3 0.1 0.3 1 3 10 Transition frequency fT (MHz) 3000 0.01 0.03 0.1 0.3 1 Collector current IC (A) Collector current IC (A) Collector current IC (A) Area of safe operation (ASO) 10 3 103 Non repetitive pulse TC=25˚C ICP t=1ms IC 0.3 0.1 0.03 0.01 0.003 0.001 1 3 10 30 100 10ms DC Rth(t) — t (1) Without heat sink (2) With a 100 × 100 × 2mm Al heat sink (1) Thermal resistance Rth(t) (˚C/W) Collector current IC (A) 102 1 10 (2) 1 2SD1263A 2SD1263 10–1 300 1000 10–2 10–4 10–3 10–2 10–1 1 10 102 103 104 Collector to emitter voltage VCE (V) Time t (s) 2