2SD1264

Power Transistors 2SB940, 2B940A Silicon PNP epitaxial planar type For power amplification For TV vertical deflection output Complementary to 2SD1264 and 2SD1264A Unit: mm 0.7±0.1 10.0±0.2 5.5±0.2 2.7±0.2 4.2±0.2 φ3.1±0.1 1.4±0.1 1.3±0.2 0.8±0.1 0.5 +0.2 –0.1 2.54±0.25 5.08±0.5 1 2 3 4.2±0.2 q q 16.7±0.3 14.0±0.5 q High collector to emitter voltage VCEO Large collector power dissipation PC Full-pack package which can be installed to the heat sink with one screw s Absolute Maximum Ratings (TC=25˚C) Parameter Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Ratings –200 –200 –150 –180 –6 –3 –2 30 2 150 –55 to +150 Unit V 2SB940 2SB940A 2SB940 Collector to base voltage Collector to emitter voltage 2SB940A Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature V V A A W ˚C ˚C Solder Dip 4.0 7.5±0.2 s Features 1:Base 2:Collector 3:Emitter TO–220 Full Pack Package(a) s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Collector to base voltage Collector to emitter voltage 2SB940 2SB940A (TC=25˚C) Symbol ICBO IEBO VCBO VCEO VEBO hFE1 hFE2 VBE VCE(sat) fT * Conditions VCB = –200V, IE = 0 VEB = –4V, IC = 0 IC = –50µA, IE = 0 IC = –5mA, IB = 0 IE = –500µA, IC = 0 VCE = –10V, IC = –150mA VCE = –10V, IC = –400mA VCE = –10V, IC = –400mA IC = –500mA, IB = –50mA VCE = –10V, IC = – 0.5A, f = 10MHz min typ max –50 –50 Unit µA µA V V V –200 –150 –180 –6 60 50 –1 –1 30 240 Emitter to base voltage Forward current transfer ratio Base to emitter voltage Collector to emitter saturation voltage Transition frequency *h FE1 V V MHz Rank classification Q 60 to 140 P 100 to 240 Rank hFE1 1 Power Transistors PC — Ta 50 –600 (1) TC=Ta (2) With a 100 × 100 × 2mm Al heat sink (3) With a 50 × 50 × 2mm Al heat sink (4) Without heat sink (PC=2W) TC=25˚C –500 IB=–4.5mA –4.0mA –3.5mA –3.0mA –2.5mA –2.0mA –1.5mA –1.0mA – 0.5mA 0 0 20 40 60 80 100 120 140 160 0 –2 –4 –6 –8 –10 –12 0 0 2SB940, 2SB940A IC — VCE –2.0 VCE=–10V IC — VBE Collector power dissipation PC (W) Collector current IC (A) Collector current IC (A) 40 –1.6 25˚C –1.2 TC=100˚C –400 30 –300 (1) 20 – 0.8 –25˚C –200 10 (3) (4) 0 (2) –100 – 0.4 – 0.2 – 0.4 – 0.6 – 0.8 –1.0 Ambient temperature Ta (˚C) Collector to emitter voltage VCE (V) Base to emitter voltage VBE (V) VCE(sat) — IC Collector to emitter saturation voltage VCE(sat) (V) 10000 –10 IC/IB=10 hFE — IC 10000 VCE=–10V 3000 1000 300 100 30 10 3 fT — IC VCE=–10V f=10MHz TC=25˚C Forward current transfer ratio hFE –3 1000 300 100 –25˚C 30 10 3 1 – 0.01 – 0.03 – 0.1 – 0.3 TC=100˚C 25˚C –1 TC=100˚C 25˚C –25˚C – 0.3 – 0.1 – 0.03 – 0.01 – 0.01 – 0.03 Transition frequency fT (MHz) –1 –3 –10 3000 – 0.1 – 0.3 –1 –3 1 – 0.01 – 0.03 – 0.1 – 0.3 –1 –3 –10 Collector current IC (A) Collector current IC (A) Collector current IC (A) Area of safe operation (ASO) –100 –30 103 Non repetitive pulse TC=25˚C Rth(t) — t (1) Without heat sink (2) With a 100 × 100 × 2mm Al heat sink (1) Thermal resistance Rth(t) (˚C/W) Collector current IC (A) 102 –10 –3 –1 ICP t=0.5ms IC 5ms 1ms 10 (2) – 0.3 DC – 0.1 – 0.03 – 0.01 –1 1 2SB940A 10–1 2SB940 –3 –10 –30 –100 –300 –1000 10–2 10–4 10–3 10–2 10–1 1 10 102 103 104 Collector to emitter voltage VCE (V) Time t (s) 2