2SD1264A

Power Transistors 2SD1264, 2SD1264A Silicon NPN triple diffusion planar type For low-freauency power amplification For TV vertical deflection output Complementary to 2SB940 and 2SB940A Unit: mm 0.7±0.1 10.0±0.2 5.5±0.2 2.7±0.2 4.2±0.2 φ3.1±0.1 1.4±0.1 1.3±0.2 0.8±0.1 0.5 +0.2 –0.1 2.54±0.25 5.08±0.5 1 2 3 4.2±0.2 q q q (TC=25˚C) Ratings 200 150 180 6 3 2 30 2 150 –55 to +150 Unit V V V A A W ˚C ˚C Parameter Collector to base voltage Collector to 2SD1264 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg emitter voltage 2SD1264A Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature Solder Dip s Absolute Maximum Ratings 14.0±0.5 4.0 High collector to emitter VCEO Large collector power dissipation PC Full-pack package which can be installed to the heat sink with one screw 16.7±0.3 7.5±0.2 s Features 1:Base 2:Collector 3:Emitter TO–220 Full Pack Package(a) s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Collector to base voltage Collector to emitter voltage 2SD1264 2SD1264A (TC=25˚C) Symbol ICBO IEBO VCBO VCEO VEBO hFE1* hFE2 VBE VCE(sat) fT Conditions VCB = 200V, IE = 0 VEB = 4V, IC = 0 IC = 50µA, IE = 0 IC = 5mA, IB = 0 IE = 500µA, IC = 0 VCE = 10V, IC = 150mA VCE = 10V, IC = 400mA VCE = 10V, IC = 400mA IC = 500mA, IB = 50mA VCE = 5V, IC = 0.5A, f = 1MHz 20 200 150 180 6 60 50 1 1 V V MHz 240 min typ max 50 50 Unit µA µA V V V Emitter to base voltage Forward current transfer ratio Base to emitter voltage Collector to emitter saturation voltage Transition frequency *h FE1 Rank classification Q 60 to 140 P 100 to 240 Rank hFE1 1 Power Transistors PC — Ta 50 1.2 (1) TC=Ta (2) With a 100 × 100 × 2mm Al heat sink (3) With a 50 × 50 × 2mm Al heat sink (4) Without heat sink (PC=2W) TC=25˚C 1.0 IB=7mA 2SD1264, 2SD1264A IC — VCE 1.2 IC — VBE Collector power dissipation PC (W) Collector current IC (A) 30 (1) 0.8 Collector current IC (A) 40 1.0 25˚C TC=100˚C –25˚C 6mA 5mA 4mA 0.6 3mA 0.4 2mA 0.2 0.8 0.6 20 0.4 10 (2) (3) (4) 1mA 0.2 0 0 20 40 60 80 100 120 140 160 0 0 4 8 12 16 20 24 0 0 0.2 0.4 0.6 0.8 1.0 1.2 Ambient temperature Ta (˚C) Collector to emitter voltage VCE (V) Base to emitter voltage VBE (V) VCE(sat) — IC Collector to emitter saturation voltage VCE(sat) (V) 10 IC/IB=10 10000 hFE — IC 1000 VCE=10V 300 100 30 10 3 1 0.3 0.1 0.01 0.03 fT — IC VCE=5V f=1MHz TC=25˚C Forward current transfer ratio hFE 3 1000 300 100 –25˚C 30 10 3 1 0.01 0.03 TC=100˚C 25˚C 1 TC=100˚C 0.3 25˚C –25˚C 0.1 0.03 0.01 0.01 0.03 0.1 0.3 1 0.1 0.3 1 3 10 Transition frequency fT (MHz) 3000 0.1 0.3 1 3 10 Collector current IC (A) Collector current IC (A) Collector current IC (A) Area of safe operation (ASO) 10 3 ICP IC 5ms 1ms DC 0.1 0.03 0.01 0.003 0.001 1 3 10 30 Non repetitive pulse TC=25˚C 103 Rth(t) — t (1) Without heat sink (2) With a 100 × 100 × 2mm Al heat sink (1) Thermal resistance Rth(t) (˚C/W) Collector current IC (A) 1 0.3 t=0.5ms 102 10 (2) 1 2SD1264A 2SD1264 10–1 100 300 1000 10–2 10–4 10–3 10–2 10–1 1 10 102 103 104 Collector to emitter voltage VCE (V) Time t (s) 2