2SD1270

Power Transistors 2SD1270 Silicon NPN epitaxial planar type For power switching Complementary to 2SB945 0.7±0.1 10.0±0.2 5.5±0.2 2.7±0.2 4.2±0.2 Unit: mm 4.2±0.2 s Features q q q q Low collector to emitter saturation voltage VCE(sat) Satisfactory linearity of foward current transfer ratio hFE Large collector current IC Full-pack package which can be installed to the heat sink with one screw (TC=25˚C) Ratings 130 80 7 10 5 40 2 150 –55 to +150 Unit V V V A A W ˚C ˚C 7.5±0.2 16.7±0.3 φ3.1±0.1 4.0 1.4±0.1 1.3±0.2 Solder Dip s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg 14.0±0.5 0.8±0.1 0.5 +0.2 –0.1 2.54±0.25 5.08±0.5 1 2 3 1:Base 2:Collector 3:Emitter TO–220 Full Pack Package(a) s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time *h FE2 (TC=25˚C) Symbol ICBO IEBO VCEO hFE1 hFE2* VCE(sat) VBE(sat) fT ton tstg tf Conditions VCB = 100V, IE = 0 VEB = 5V, IC = 0 IC = 10mA, IB = 0 VCE = 2V, IC = 0.1A VCE = 2V, IC = 2A IC = 4A, IB = 0.2A IC = 4A, IB = 0.2A VCE = 10V, IC = 0.5A, f = 10MHz IC = 2A, IB1 = 0.2A, IB2 = – 0.2A, VCC = 50V 30 0.5 1.5 0.15 80 45 60 260 0.5 1.5 V V MHz µs µs µs min typ max 10 50 Unit µA µA V Rank classification R 60 to 120 Q 90 to 180 P 130 to 260 Rank hFE2 Note: Ordering can be made by the common rank (PQ rank hFE = 90 to 260) in the rank classification. 1 Power Transistors PC — Ta 50 6 (1) TC=Ta (2) With a 100 × 100 × 2mm Al heat sink (3) With a 50 × 50 × 2mm Al heat sink (4) Without heat sink (PC=2W) TC=25˚C 5 IB=100mA 70mA 4 50mA 40mA 3 30mA 2 20mA 10mA 2SD1270 IC — VCE Collector to emitter saturation voltage VCE(sat) (V) 100 IC/IB=20 30 10 3 1 TC=100˚C 0.3 0.1 0.03 0.01 0.01 0.03 25˚C –25˚C VCE(sat) — IC Collector power dissipation PC (W) 30 20 10 (2) (3) (4) Collector current IC (A) 40 (1) 1 0 0 20 40 60 80 100 120 140 160 0 0 1 2 3 4 5 6 0.1 0.3 1 3 10 Ambient temperature Ta (˚C) Collector to emitter voltage VCE (V) Collector current IC (A) VBE(sat) — IC 100 10000 IC/IB=20 hFE — IC 10000 VCE=2V 3000 1000 300 100 30 10 3 1 0.01 0.03 fT — IC VCE=10V f=10MHz TC=25˚C Base to emitter saturation voltage VBE(sat) (V) Forward current transfer ratio hFE 10 3 1 0.3 0.1 0.03 0.01 0.01 0.03 TC=–25˚C 100˚C 25˚C 1000 300 T =100˚C C 100 30 10 3 1 0.01 0.03 25˚C –25˚C 0.1 0.3 1 3 10 0.1 0.3 1 3 10 Transition frequency fT (MHz) 30 3000 0.1 0.3 1 3 10 Collector current IC (A) Collector current IC (A) Collector current IC (A) Cob — VCB 10000 100 IE=0 f=1MHz TC=25˚C 30 ton, tstg, tf — IC Pulsed tw=1ms Duty cycle=1% IC/IB=10 (IB1=–IB2) VCC=50V TC=25˚C Area of safe operation (ASO) 100 30 Non repetitive pulse TC=25˚C ICP IC 3 1 0.3 0.1 0.03 0.01 10ms 1ms t=0.5ms Collector output capacitance Cob (pF) 3000 1000 300 100 30 10 3 1 0.1 Switching time ton,tstg,tf (µs) Collector current IC (A) 10 3 1 0.3 0.1 0.03 0.01 10 tstg ton tf DC 0.3 1 3 10 30 100 0 1 2 3 4 5 1 3 10 30 100 300 1000 Collector to base voltage VCB (V) Collector current IC (A) Collector to emitter voltage VCE (V) 2 Power Transistors Rth(t) — t 103 (1) Without heat sink (2) With a 100 × 100 × 2mm Al heat sink 2SD1270 Thermal resistance Rth(t) (˚C/W) 102 (1) 10 (2) 1 10–1 10–2 10–4 10–3 10–2 10–1 1 10 102 103 104 Time t (s) 3