Power Transistors
2SD1271, 2SD1271A
Silicon NPN epitaxial planar type
For power switching Complementary to 2SB946 and 2SB946A
Unit: mm
0.7±0.1 10.0±0.2 5.5±0.2 2.7±0.2 4.2±0.2 φ3.1±0.1 1.4±0.1 1.3±0.2 0.8±0.1 0.5 +0.2 –0.1 2.54±0.25 5.08±0.5 1 2 3 4.2±0.2
s Features
q q q q
Low collector to emitter saturation voltage VCE(sat) Satisfactory linearity of foward current transfer ratio hFE Large collector current IC Full-pack package which can be installed to the heat sink with one screw (TC=25˚C)
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to 2SD1271 2SD1271A 2SD1271 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
16.7±0.3 14.0±0.5
Ratings 130 150 80 100 7 15 7 40 2 150 –55 to +150
Unit V
emitter voltage 2SD1271A Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature
V V A A W ˚C ˚C
Solder Dip
4.0
7.5±0.2
1:Base 2:Collector 3:Emitter TO–220 Full Pack Package(a)
s Electrical Characteristics
Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage 2SD1271 2SD1271A
(TC=25˚C)
Symbol ICBO IEBO VCEO hFE1 hFE2* VCE(sat) VBE(sat) fT ton tstg tf Conditions VCB = 100V, IE = 0 VEB = 5V, IC = 0 IC = 10mA, IB = 0 VCE = 2V, IC = 0.1A VCE = 2V, IC = 3A IC = 5A, IB = 0.25A IC = 5A, IB = 0.25A VCE = 10V, IC = 0.5A, f = 10MHz IC = 3A, IB1 = 0.3A, IB2 = – 0.3A, VCC = 50V 30 0.5 1.5 0.1 80 100 45 90 260 0.5 1.5 V V MHz µs µs µs min typ max 10 50 Unit µA µA V
Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time
*h FE2
Rank classification
Q 90 to 180 P 130 to 260
Rank hFE2
1
Power Transistors
PC — Ta
50 10 (1) TC=Ta (2) With a 100 × 100 × 2mm Al heat sink (3) With a 50 × 50 × 2mm Al heat sink (4) Without heat sink (PC=2W) TC=25˚C
2SD1271, 2SD1271A
IC — VCE
Collector to emitter saturation voltage VCE(sat) (V)
10
VCE(sat) — IC
(1) IC/IB=10 (2) IC/IB=20 TC=25˚C
Collector power dissipation PC (W)
Collector current IC (A)
40
(1)
8 IB=55mA 6 50mA 45mA 40mA 35mA 30mA 20mA 15mA 2 10mA 5mA 0
3
30
1
(2) (1)
0.3
20
4
0.1
10
(2) (3) (4)
0.03
0 0 20 40 60 80 100 120 140 160
0
2
4
6
8
10
12
0.01 0.01
0.03
0.1
0.3
1
3
Ambient temperature Ta (˚C)
Collector to emitter voltage VCE (V)
Collector current IC (A)
VCE(sat) — IC
Collector to emitter saturation voltage VCE(sat) (V)
100
VBE(sat) — IC
Base to emitter saturation voltage VBE(sat) (V)
10
VBE(sat) — IC
Base to emitter saturation voltage VBE(sat) (V)
(1) IC/IB=10 (2) IC/IB=20 TC=25˚C 100 IC/IB=20 30 10 3 1 0.3 0.1 0.03 0.01 0.01 0.03 TC=–25˚C 100˚C 25˚C
IC/IB=20 30 10 3 1 TC=100˚C 0.3 0.1 –25˚C 0.03 0.01 0.01 0.03 25˚C
3 (1) (2)
1
0.3
0.1
0.03
0.1
0.3
1
3
10
0.01 0.1
0.3
1
3
10
30
0.1
0.3
1
3
10
Collector current IC (A)
Collector current IC (A)
Collector current IC (A)
hFE — IC
10000 VCE=2V 10000 3000 1000 300 100 30 10 3 1 0.01 0.03
fT — IC
10000
Cob — VCB
Collector output capacitance Cob (pF)
VCE=10V f=10MHz TC=25˚C IE=0 f=1MHz TC=25˚C
Forward current transfer ratio hFE
1000 300
Transition frequency fT (MHz)
3000
3000 1000 300 100 30 10 3 1 0.1
TC=100˚C 25˚C 100 –25˚C 30 10 3 1 0.01 0.03
0.1
0.3
1
3
10
0.1
0.3
1
3
10
0.3
1
3
10
30
100
Collector current IC (A)
Collector current IC (A)
Collector to base voltage VCB (V)
2
Power Transistors
ton, tstg, tf — IC
100 30 Pulsed tw=1ms Duty cycle=1% IC/IB=10 (IB1=–IB2) VCC=50V TC=25˚C
2SD1271, 2SD1271A
Area of safe operation (ASO)
100 30 ICP Non repetitive pulse TC=25˚C
Switching time ton,tstg,tf (µs)
10 3 1 0.3 0.1 0.03 0.01 0 1 2 3 4
Collector current IC (A)
10 IC 3 1 0.3 0.1 0.03 0.01
t=0.5ms 10ms 1ms DC
tstg ton tf
5
6
7
8
1
3
10
30
100
2SD1271A
300
2SD1271
1000
Collector current IC (A)
Collector to emitter voltage VCE (V)
Rth(t) — t
103 (1) Without heat sink (2) With a 100 × 100 × 2mm Al heat sink
Thermal resistance Rth(t) (˚C/W)
102
(1)
10
(2)
1
10–1
10–2 10–4
10–3
10–2
10–1
1
10
102
103
104
Time t (s)
3