2SD1272

Power Transistors 2SD1272 Silicon NPN triple diffusion planar type For high-speed switching and high current amplification ratio 0.7±0.1 10.0±0.2 5.5±0.2 2.7±0.2 4.2±0.2 Unit: mm 4.2±0.2 s Features q q q High foward current transfer ratio hFE Satisfactory linearity of foward current transfer ratio hFE Full-pack package which can be installed to the heat sink with one screw (TC=25˚C) Ratings 200 150 6 2.5 1 0.1 40 2 150 –55 to +150 Unit V V V A A A W ˚C ˚C 7.5±0.2 16.7±0.3 φ3.1±0.1 4.0 14.0±0.5 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC IB PC Tj Tstg 1.4±0.1 1.3±0.2 Solder Dip 0.8±0.1 0.5 +0.2 –0.1 2.54±0.25 5.08±0.5 1 2 3 1:Base 2:Collector 3:Emitter TO–220 Full Pack Package(a) s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency (TC=25˚C) Symbol ICBO IEBO VCEO hFE* VCE(sat) fT Conditions VCB = 200V, IE = 0 VEB = 6V, IC = 0 IC = 25mA, IB = 0 VCE = 4V, IC = 0.2A IC = 0.5A, IB = 0.02A VCE = 4V, IC = 0.1A, f = 10MHz 25 150 500 2000 1 V MHz min typ max 100 100 Unit µA µA V *h FE Rank classification Q P Rank hFE 500 to 1200 800 to 2000 1 Power Transistors PC — Ta 50 0.5 (1) TC=Ta (2) With a 100 × 100 × 2mm Al heat sink (3) With a 50 × 50 × 2mm Al heat sink (4) Without heat sink (PC=2W) TC=25˚C IB=400µA 350µA 300µA 0.3 250µA 200µA 0.2 150µA 100µA 0.1 50µA 0 0 20 40 60 80 100 120 140 160 0 2 4 6 8 10 12 2SD1272 IC — VCE Collector to emitter saturation voltage VCE(sat) (V) 10 VCE(sat) — IC IC/IB=25 Collector power dissipation PC (W) Collector current IC (A) 40 (1) 0.4 3 TC=100˚C 30 1 0.3 25˚C 20 –25˚C 0.1 10 (2) (3) (4) 0.03 0 0.01 0.01 0.03 0.1 0.3 1 3 Ambient temperature Ta (˚C) Collector to emitter voltage VCE (V) Collector current IC (A) VBE(sat) — IC 10000 hFE — IC 10000 VCE=4V 3000 1000 300 100 30 10 3 1 0.01 0.03 IC/IB=25 fT — IC VCE=4V f=10MHz TC=25˚C Base to emitter saturation voltage VBE(sat) (V) 10 Forward current transfer ratio hFE 3 25˚C 1 TC=100˚C 1000 300 100 30 10 3 TC=100˚C 25˚C –25˚C –25˚C 0.3 0.1 0.03 0.01 0.01 0.03 0.1 0.3 1 3 1 0.01 0.03 0.1 0.3 1 3 10 Transition frequency fT (MHz) 3000 0.1 0.3 1 3 10 Collector current IC (A) Collector current IC (A) Collector current IC (A) Area of safe operation (ASO) 100 30 102 Non repetitive pulse TC=25˚C Rth(t) — t (1) Without heat sink (2) With a 100 × 100 × 2mm Al heat sink (1) Thermal resistance Rth(t) (˚C/W) Collector current IC (A) 10 3 1 0.3 0.1 0.03 0.01 1 3 10 30 100 300 1000 ICP IC 10ms t=1ms 10 (2) 1 DC 10–1 10–2 10–4 10–3 10–2 10–1 1 10 102 103 104 Collector to emitter voltage VCE (V) Time t (s) 2