2SD1274

Power Transistors 2SD1274, 2SD1274A, 2SD1274B Silicon NPN triple diffusion planar type For power amplification Unit: mm 0.7±0.1 s Features q q q 10.0±0.2 5.5±0.2 2.7±0.2 4.2±0.2 φ3.1±0.1 1.4±0.1 4.2±0.2 s Absolute Maximum Ratings Parameter Collector to base voltage 2SD1274 2SD1274A 2SD1274B 2SD1274 2SD1274A 2SD1274B VCEO VEBO IC PC Tj Tstg VCES VCBO Symbol (TC=25˚C) Ratings 150 200 250 150 200 250 80 6 5 40 2 150 –55 to +150 V V A W ˚C ˚C V 5.08±0.5 1 2 3 16.7±0.3 High collector to base voltage VCBO High-speed switching Full-pack package which can be installed to the heat sink with one screw 7.5±0.2 Unit 14.0±0.5 Solder Dip 4.0 1.3±0.2 V 0.8±0.1 0.5 +0.2 –0.1 2.54±0.25 Collector to emitter voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature 1:Base 2:Collector 3:Emitter TO–220 Full Pack Package(a) s Electrical Characteristics Parameter Collector cutoff current 2SD1274 2SD1274A 2SD1274B (TC=25˚C) Symbol Conditions VCB = 150V, IE = 0 ICBO VCEO(sus)* VEBO hFE VBE VCE(sat) fT tf VCB = 200V, IE = 0 VCB = 250V, IE = 0 IC = 0.2A, L = 25mH IE = 1mA, IC = 0 VCE = 4V, IC = 5A VCE = 4V, IC = 5A IC = 5A, IB = 1A VCE = 10V, IC = 0.5A, f = 10MHz IC = 5A, IB1 = 0.8A, VEB = –5V X L 25mH Y 15V G 80 IC(A) 0.2 0.1 VCE(V) min typ max 1 1 1 Unit mA Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Base to emitter voltage Collector to emitter saturation voltage Transition frequency Fall time *V CEO(sus) 80 6 14 1.5 1.6 40 1 V V V V MHz µs Test circuit 60Hz 120Ω 6V 1Ω 1 Power Transistors PC — Ta 50 6 (1) TC=Ta (2) With a 100 × 100 × 2mm Al heat sink (3) With a 50 × 50 × 2mm Al heat sink (4) Without heat sink (PC=2W) 2SD1274, 2SD1274A, 2SD1274B IC — VCE 8 TC=25˚C 5 IB=45mA 7 25˚C VCE=4V IC — VBE Collector power dissipation PC (W) Collector current IC (A) Collector current IC (A) 40 (1) 40mA 35mA 4 30mA 25mA 3 20mA 2 15mA 10mA 1 5mA 0 6 5 4 3 2 1 0 TC=100˚C –25˚C 30 20 10 (2) (3) (4) 0 0 20 40 60 80 100 120 140 160 0 2 4 6 8 10 12 0 0.4 0.8 1.2 1.6 2.0 Ambient temperature Ta (˚C) Collector to emitter voltage VCE (V) Base to emitter voltage VBE (V) VCE(sat) — IC Collector to emitter saturation voltage VCE(sat) (V) 100 IC/IB=10 30 10 3 1 TC=100˚C 0.3 0.1 0.03 0.01 0.01 0.03 25˚C –25˚C 10000 hFE — IC 10000 VCE=4V 3000 1000 300 100 30 10 3 1 0.01 0.03 fT — IC VCE=10V f=10MHz TC=25˚C Forward current transfer ratio hFE 1000 300 100 30 10 3 1 0.01 0.03 TC=100˚C 25˚C –25˚C 0.1 0.3 1 3 10 0.1 0.3 1 3 10 Transition frequency fT (MHz) 3000 0.1 0.3 1 3 10 Collector current IC (A) Collector current IC (A) Collector current IC (A) Cob — VCB 10000 Area of safe operation (ASO) 100 IE=0 f=1MHz TC=25˚C 30 Non repetitive pulse TC=25˚C Area of safe operation, horizontal operation ASO 20 18 f=15.75kHz, TC=25˚C Area of safe operation for the single pulse load curve due to discharge in the high-voltage rectifier tube during horizontal operation Collector output capacitance Cob (pF) 3000 1000 300 100 30 10 3 1 1 3 10 30 100 Collector current IC (A) 10 ICP 3 1 0.3 0.1 0.03 0.01 IC DC t=1ms Collector current IC (A) 16 14 12 10 8 6 4 2