Power Transistors
2SD1276, 2SD1276A
Silicon NPN triple diffusion planar type Darlington
0.7±0.1
For power amplification Complementary to 2SB950 and 2SB950A
10.0±0.2 5.5±0.2 2.7±0.2 4.2±0.2
4.2±0.2
Unit: mm
q q
16.7±0.3
q
High foward current transfer ratio hFE High-speed switching Full-pack package which can be installed to the heat sink with one screw (TC=25˚C)
7.5±0.2
s Features
φ3.1±0.1
14.0±0.5
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to 2SD1276 2SD1276A 2SD1276 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
4.0
1.4±0.1
1.3±0.2
Ratings 60 80 60 80 5 8 4 40 2 150 –55 to +150
Unit V
Solder Dip
0.8±0.1
0.5 +0.2 –0.1
2.54±0.25 5.08±0.5 1 2
emitter voltage 2SD1276A Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature
V V A A W ˚C ˚C
B
1:Base 2:Collector 3:Emitter TO–220 Full Pack Package(a)
3
Internal Connection
C
s Electrical Characteristics
Parameter Collector cutoff current Collector cutoff current Emitter cutoff current Collector to emitter voltage 2SD1276 2SD1276A 2SD1276 2SD1276A 2SD1276 2SD1276A
(TC=25˚C)
Symbol ICBO ICEO IEBO VCEO hFE1 hFE2* VCE(sat) VBE fT ton tstg tf Conditions VCB = 60V, IE = 0 VCB = 80V, IE = 0 VCE = 30V, IB = 0 VCE = 40V, IB = 0 VEB = 5V, IC = 0 IC = 30mA, IB = 0 VCE = 3V, IC = 0.5A VCE = 3V, IC = 3A IC = 3A, IB = 12mA IC = 5A, IB = 20mA VCE = 3V, IC = 3A VCE = 10V, IC = 0.5A, f = 1MHz IC = 3A, IB1 = 12mA, IB2 = –12mA, VCC = 50V 20 0.5 4 1 60 80 1000 2000 min typ
E
max 200 200 500 500 2
Unit µA µA mA V
Forward current transfer ratio
10000 2 4 2.5 V V MHz µs µs µs
Collector to emitter saturation voltage Base to emitter voltage Transition frequency Turn-on time Storage time Fall time
*h FE2
Rank classification
Q P 2000 to 5000 4000 to 10000
Rank hFE2
1
Power Transistors
PC — Ta
50 10 (1) TC=Ta (2) With a 100 × 100 × 2mm Al heat sink (3) With a 50 × 50 × 2mm Al heat sink (4) Without heat sink (PC=2W) TC=25˚C IB=4.0mA
2SD1276, 2SD1276A
IC — VCE
10 VCE=3V
IC — VBE
Collector power dissipation PC (W)
Collector current IC (A)
Collector current IC (A)
40
(1)
8
30
6
3.5mA 3.0mA 2.5mA 2.0mA 1.5mA 1.0mA 0.5mA
8
25˚C 6 TC=100˚C –25˚C
20
4
4
10
(2) (3) (4)
2
2
0 0 20 40 60 80 100 120 140 160
0 0 2 4 6 8 10
0 0 0.8 1.6 2.4 3.2
Ambient temperature Ta (˚C)
Collector to emitter voltage VCE (V)
Base to emitter voltage VBE (V)
VCE(sat) — IC
Collector to emitter saturation voltage VCE(sat) (V)
100 IC/IB=250 30 10 3 1 TC=100˚C –25˚C 0.3 0.1 0.03 0.01 0.01 0.03 25˚C 105
hFE — IC
10000
Cob — VCB
Collector output capacitance Cob (pF)
VCE=3V IE=0 f=1MHz TC=25˚C
Forward current transfer ratio hFE
3000 1000 300 100 30 10 3 1 0.1
TC=100˚C 104 25˚C –25˚C
103
102
0.1
0.3
1
3
10
10 0.01 0.03
0.1
0.3
1
3
10
0.3
1
3
10
30
100
Collector current IC (A)
Collector current IC (A)
Collector to base voltage VCB (V)
Area of safe operation (ASO)
100 30 103 Non repetitive pulse TC=25˚C
Rth(t) — t
(1) Without heat sink (2) With a 100 × 100 × 2mm Al heat sink (1)
Thermal resistance Rth(t) (˚C/W)
Collector current IC (A)
10 ICP t=1ms 3 IC 10ms 1 DC 0.3 0.1 0.03 0.01 1 3 10 30
102
10
(2)
1
2SD1276A
2SD1276
10–1
100
300
1000
10–2 10–4
10–3
10–2
10–1
1
10
102
103
104
Collector to emitter voltage VCE
(V)
Time t (s)
2
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