Power Transistors
2SD1277, 2SD1277A
Silicon NPN triple diffusion planar type Darlington
0.7±0.1
For midium speed power switching Complementary to 2SB951 and 2SB951A
10.0±0.2 5.5±0.2 2.7±0.2 4.2±0.2
4.2±0.2
Unit: mm
q q
16.7±0.3
q
High foward current transfer ratio hFE High-speed switching Full-pack package which can be installed to the heat sink with one screw
7.5±0.2
s Features
φ3.1±0.1
4.0
14.0±0.5
s
Absolute Maximum Ratings (TC=25˚C)
Parameter Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Ratings 60 80 60 80 7 12 8 45 2 150 –55 to +150 Unit V 2SD1277 2SD1277A 2SD1277
1.4±0.1
1.3±0.2
Solder Dip
0.8±0.1
0.5 +0.2 –0.1
Collector to base voltage Collector to
2.54±0.25 5.08±0.5
emitter voltage 2SD1277A Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature
V V A A W
B
1
2
1:Base 2:Collector 3:Emitter TO–220 Full Pack Package(a)
3
Internal Connection
C
˚C ˚C
E
s Electrical Characteristics
Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage 2SD1277 2SD1277A 2SD1277 2SD1277A
(TC=25˚C)
Symbol ICBO IEBO VCEO hFE1* hFE2 VCE(sat) VBE(sat) fT ton tstg tf Conditions VCB = 60V, IE = 0 VCB = 80V, IE = 0 VEB = 7V, IC = 0 IC = 30mA, IB = 0 VCE = 3V, IC = 4A VCE = 3V, IC = 8A IC = 4A, IB = 8mA IC = 4A, IB = 8mA VCE = 10V, IC = 0.5A, f = 1MHz IC = 4A, IB1 = 8mA, IB2 = –8mA, VCC = 50V 20 0.5 4 1 60 80 2000 500 1.5 2 V V MHz µs µs µs 10000 min typ max 100 100 2 Unit µA mA V
Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time
*h FE1
Rank classification
Q P 2000 to 5000 4000 to 10000
Rank hFE1
1
Power Transistors
PC — Ta
50 12 (1) 40 (1) TC=Ta (2) With a 100 × 100 × 2mm Al heat sink (3) With a 50 × 50 × 2mm Al heat sink (4) Without heat sink (PC=2W) TC=25˚C 10
2SD1277, 2SD1277A
IC — VCE
Collector to emitter saturation voltage VCE(sat) (V)
10
VCE(sat) — IC
(1) IC/IB=250 (2) IC/IB=500 (3) IC/IB=1000 TC=25˚C (3) (2) (1)
Collector power dissipation PC (W)
Collector current IC (A)
3
8 IB=4.0mA 3.5mA 3.0mA 2.5mA 2.0mA 1.5mA 1.0mA 0.5mA 2
30
1
6
0.3
20
4
0.1
10
(2) (3) (4)
0.03
0 0 20 40 60 80 100 120 140 160
0 0 1 2 3 4 5
0.01 0.1
0.3
1
3
10
30
Ambient temperature Ta (˚C)
Collector to emitter voltage VCE (V)
Collector current IC (A)
VCE(sat) — IC
Collector to emitter saturation voltage VCE(sat) (V)
10 IC/IB=500 TC=100˚C 3 25˚C –25˚C
VCB(sat) — IC
100000
hFE — IC
IC/IB=500 VCE=3V
Base to emitter saturation voltage VBE(sat) (V)
10
Forward current transfer ratio hFE
30000
TC=100˚C 25˚C –25˚C
3 TC=–25˚C 1 100˚C 25˚C
10000
1
3000 1000 300 100 30 10 0.1
0.3
0.3
0.1
0.1
0.03
0.03
0.01 0.1
0.3
1
3
10
30
0.01 0.1
0.3
1
3
10
30
0.3
1
3
10
30
100
Collector current IC (A)
Collector current IC (A)
Collector current IC (A)
Area of safe operation (ASO)
100 30 103 Non repetitive pulse TC=25˚C ICP 10 IC 3 1 0.3 0.1 0.03 0.01 1 3 10 30 DC 1ms t=10ms
Rth(t) — t
(1) Without heat sink (2) With a 100 × 100 × 2mm Al heat sink
Thermal resistance Rth(t) (˚C/W)
Collector current IC (A)
102
(1)
10
(2)
1
2SD1277A
2SD1277
10–1
100
300
1000
10–2 10–4
10–3
10–2
10–1
1
10
102
103
104
Collector to emitter voltage VCE
(V)
Time t (s)
2
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