2SD1280

Transistor 2SD1280 Silicon NPN epitaxial planer type For low-voltage type medium output power amplification Unit: mm s Features q q 4.5±0.1 1.6±0.2 1.5±0.1 q Low collector to emitter saturation voltage VCE(sat). Satisfactory operation performances at high efficiency with the low-voltage power supply. Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. (Ta=25˚C) Ratings 20 20 5 2 1 1 150 –55 ~ +150 1cm2 Unit V V V A A W ˚C ˚C 2.6±0.1 0.4max. 45° 1.0–0.2 +0.1 0.4±0.08 0.5±0.08 1.5±0.1 3.0±0.15 4.0–0.20 0.4±0.04 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature * 3 2 1 Symbol VCBO VCEO VEBO ICP IC PC* Tj Tstg marking 1:Base 2:Collector 3:Emitter EIAJ:SC–62 Mini Power Type Package Marking symbol : R Printed circuit board: Copper foil area of thickness of 1.7mm for the collector portion or more, and the board s Electrical Characteristics Parameter Collector cutoff current Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Base to emitter saturation voltage Collector to emitter saturation voltage Transition frequency Collector output capacitance *1h (Ta=25˚C) Symbol ICBO VCEO VEBO hFE1*1 hFE2 VBE(sat) VCE(sat) fT Cob Conditions VCB = 10V, IE = 0 IC = 1mA, IB = 0 IE = 10µA, IC = 0 VCE = 2V, IC = 500mA*2 VCE = 2V, IC = 1.5A*2 IC = 500mA, IB = 50mA*2 IC = 1A, IB = 50mA*2 150 18 *2 min typ max 1 20 5 90 50 150 100 1.2 0.5 360 VCB = 6V, IE = –50mA, f = 200MHz VCB = 6V, IE = 0, f = 1MHz Pulse measurement FE1 Rank classification Rank hFE1 Q 90 ~ 155 RQ R 130 ~ 210 RR S 180 ~ 280 RS T 250 ~ 360 RT Marking Symbol 2.5±0.1 +0.25 Unit µA V V V V MHz pF 1 Transistor PC — Ta 1.2 1.2 Printed circut board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion. Ta=25˚C 1.0 1.0 IB=5.0mA 4.5mA 4.0mA 0.6 3.5mA 3.0mA 2.5mA 2.0mA 1.5mA 1.0mA 0.5mA 0 0 20 40 60 80 100 120 140 160 0 0 0.4 0.8 1.2 1.6 2.0 0 0 0.1 0.2 IC/IB=10 20 2SD1280 IC — VCE 1.2 Ta=25˚C IC — VCE(sat) Collector power dissipation PC (W) 1.0 Collector current IC (A) 0.8 0.8 Collector current IC (A) 0.8 0.6 0.6 0.4 0.4 0.4 0.2 0.2 0.2 0.3 0.4 0.5 Ambient temperature Ta (˚C) Collector to emitter voltage VCE (V) Collector to emitter saturation voltage VCE(sat) (V) IC — IB Collector to emitter saturation voltage VCE(sat) (V) 1.2 VCE=2V Ta=25˚C 1.0 100 30 10 3 1 VCE(sat) — IC Base to emitter saturation voltage VBE(sat) (V) IC/IB=20 100 30 10 3 VBE(sat) — IC IC/IB=10 Collector current IC (A) 0.8 25˚C 1 0.3 0.1 0.03 0.01 0.01 0.03 Ta=–25˚C 75˚C 0.6 Ta=75˚C 0.3 0.1 0.03 0.01 0.01 0.03 25˚C –25˚C 0.4 0.2 0 0 2 4 6 8 10 12 0.1 0.3 1 3 10 0.1 0.3 1 3 10 Base current IB (mA) Collector current IC (A) Collector current IC (A) hFE — IC 600 VCE=2V 200 175 150 125 100 75 50 25 0 0.01 0.03 0 –1 fT — I E 50 Cob — VCB Collector output capacitance Cob (pF) VCB=6V Ta=25˚C IE=0 f=1MHz Ta=25˚C 40 Forward current transfer ratio hFE 500 400 Transition frequency fT (MHz) 30 300 Ta=75˚C 25˚C –25˚C 20 200 100 10 0 –3 –10 –30 –100 1 3 10 30 100 0.1 0.3 1 3 10 Collector current IC (A) Emitter current IE (mA) Collector to base voltage VCB (V) 2 Transistor ICBO — Ta 104 VCB=10V 105 2SD1280 ICEO — Ta VCE=18V Area of safe operation (ASO) 10 3I CP Single pulse Ta=25˚C t=10ms t=1s 0.3 0.1 0.03 0.01 0.003 DC 103 Collector current IC (A) 0 20 40 60 80 100 120 140 160 104 1 IC ICBO (Ta) ICBO (Ta=25˚C) ICEO (Ta) ICEO (Ta=25˚C) 103 102 102 10 10 1 0 20 40 60 80 100 120 140 160 1 0.001 0.1 0.3 1 3 10 30 100 Ambient temperature Ta (˚C) Ambient temperature Ta (˚C) Collector to emitter voltage VCE (V) 3