2SD1295

Power Transistors 2SB968 Silicon PNP epitaxial planar type Unit: mm For low-frequency output amplification Complementary to 2SD1295 6.5± 0.1 5.3± 0.1 4.35± 0.1 2.3± 0.1 0.5± 0.1 2.5± 0.1 0.8max q q q Possible to solder the radiation fin directly to printed cicuit board High collector to emitter VCEO Large collector power dissipation PC 0.93±0.1 1.0± 0.1 0.1± 0.05 0.5± 0.1 0.75± 0.1 2.3± 0.1 4.6± 0.1 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation (TC=25°C) Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg 1 2 3 (Ta=25˚C) Ratings –50 –40 –5 –3 –1.5 20 150 –55 to +150 Unit V V V A A W 0.6 2.3 2.3 0.75 6.5±0.2 5.35 4.35 1:Base 2:Collector 3:Emitter U Type Package Unit: mm ˚C ˚C 1 2 3 2.3±0.1 0.5±0.1 1:Base 2:Collector 3:Emitter EIAJ:SC–63 U Type Package (Z) s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Collector to base voltage Collector to emitter voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Collector output capacitance (TC=25˚C) Symbol ICBO ICEO IEBO VCBO VCEO hFE * Conditions VCB = –20V, IE = 0 VCE = –10V, IB = 0 VEB = –5V, IC = 0 IC = –1mA, IE = 0 IC = –2mA, IB = 0 VCE = –5V, IC = –1A IC = –1.5A, IB = – 0.15A IC = –2A, IB = – 0.2A VCB = –5V, IE = 0.5A, f = 200MHz VCB = –20V, IE = 0, f = 1MHz min typ max –1 –100 –10 6.0 5.5±0.2 13.3±0.3 1.8 1.0± 0.2 s Features 7.3± 0.1 1.8± 0.1 Unit µA µA µA V V –50 –40 50 220 –1 –1.5 150 45 VCE(sat) VBE(sat) fT Cob V V MHz pF *h FE Rank classification P 50 to 100 Q 80 to 160 R 120 to 220 Rank hFE 1 Power Transistors PC — Ta 32 –4.0 TC=Ta 28 –3.5 2SB968 IC — VCE TC=25˚C IB=–40mA –35mA VCE(sat) — IC Collector to emitter saturation voltage VCE(sat) (V) –10 IC/IB=10 Collector power dissipation PC (W) Collector current IC (A) 24 20 16 12 8 4 0 0 20 40 60 80 100 120 140 160 –3.0 –2.5 –30mA –25mA –20mA –3 –1 –2.0 –15mA –1.5 –1.0 –5mA –10mA – 0.3 TC=100˚C 25˚C –25˚C – 0.1 – 0.5 0 0 –2 –4 –6 –8 –10 – 0.03 – 0.01 – 0.01 – 0.03 – 0.1 – 0.3 –1 –3 Ambient temperature Ta (˚C) Collector to emitter voltage VCE (V) Collector current IC (A) VBE(sat) — IC Base to emitter saturation voltage VBE(sat) (V) –10 IC/IB=10 1000 hFE — IC 240 VCE=–5V fT — IE VCB=–5V f=200MHz TC=25˚C Forward current transfer ratio hFE Transition frequency fT (MHz) –3 200 –3 TC=–25˚C 100˚C 25˚C 300 TC=100˚C 25˚C 160 –1 100 –25˚C 120 – 0.3 30 – 0.1 10 80 – 0.03 3 40 – 0.01 – 0.01 – 0.03 – 0.1 – 0.3 –1 –3 1 – 0.01 – 0.03 – 0.1 – 0.3 –1 0 10 30 100 300 1000 3000 10000 Collector current IC (A) Collector current IC (A) Emitter current IE (mA) Cob — VCB 150 –120 VCER — RBE 1000 TC=25˚C 300 ICEO — Ta VCE=–12V Collector output capacitance Cob (pF) 120 Collector to emitter voltage VCER (V) IE=0 f=1MHz TC=25˚C –100 –80 ICEO (Ta) ICEO (Ta=25˚C) 0.01 0.1 1 10 100 90 –60 30 60 –40 10 30 –20 3 0 –1 –3 –10 –30 –100 0 0.001 1 0 20 40 60 80 100 120 Collector to base voltage VCB (V) Base to emitter resistance RBE (kΩ) Ambient temperature Ta (˚C) 2 Power Transistors Area of safe operation (ASO) –10 –3 ICP IC Single pulse TC=25˚C t=1ms 2SB968 Collector current IC (A) –1 – 0.3 1s – 0.1 – 0.03 – 0.01 – 0.003 – 0.001 – 0.1 – 0.3 –1 –3 –10 –30 –100 Collector to emitter voltage VCE (V) 3