2SD1326

Power Transistors 2SD1326 Silicon NPN triple diffusion planar type Darlington 0.7±0.1 For midium speed power switching 10.0±0.2 5.5±0.2 2.7±0.2 4.2±0.2 4.2±0.2 Unit: mm s Features q q q q q 14.0±0.5 Solder Dip Incorporating a zener diode of 60V zener voltage between collector and base Minimized variation in the breakdown voltage Large energy handling capability High-speed switching Full-pack package which can be installed to the heat sink with one screw (TC=25˚C) Ratings 60±10 60±10 5 8 4 40 2 150 –55 to +150 Unit V V V A A W ˚C ˚C 7.5±0.2 16.7±0.3 φ3.1±0.1 4.0 1.4±0.1 1.3±0.2 0.8±0.1 0.5 +0.2 –0.1 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg 2.54±0.25 5.08±0.5 1 2 1:Base 2:Collector 3:Emitter TO–220 Full Pack Package(a) 3 Internal Connection C B E s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage Forward current transfer ratio (TC=25˚C) Symbol ICBO IEBO VCEO hFE1 hFE2*1 VCE(sat) VBE(sat) fT ton tstg tf Es/b*2 Conditions VCB = 50V, IE = 0 VEB = 5V, IC = 0 IC = 5mA, IB = 0 VCE = 3V, IC = 0.5A VCE = 3V, IC = 3A IC = 3A, IB = 12mA IC = 5A, IB = 20mA IC = 3A, IB = 12mA VCE = 10V, IC = 0.5A, f = 1MHz IC = 3A, IB1 = 12mA, IB2 = –12mA, VCC = 50V IC = 2A, L = 100mH, RBE = 100Ω *2E s/b min typ max 100 2 Unit µA mA V 50 1000 2000 70 10000 2.5 4 2.5 20 0.3 3 1 V V MHz µs µs µs mJ Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time Energy handling capability *1h FE2 50 Rank classification Q P Test circuit X L Y RBE 1Ω G Rank hFE2 60Hz mercury relay 2000 to 5000 4000 to 10000 120Ω 6V 1 Power Transistors PC — Ta 50 12 (1) TC=Ta (2) With a 100 × 100 × 2mm Al heat sink (3) With a 50 × 50 × 2mm Al heat sink (4) Without heat sink (PC=2W) TC=25˚C 10 2SD1326 IC — VCE Collector to emitter saturation voltage VCE(sat) (V) 100 IC/IB=250 30 10 3 1 TC=100˚C –25˚C 0.3 0.1 0.03 0.01 0.01 0.03 25˚C VCE(sat) — IC Collector power dissipation PC (W) Collector current IC (A) 40 (1) 8 30 6 20 IB=4.5mA 4.0mA 3.5mA 3.0mA 2.5mA 2.0mA 1.5mA 1.0mA 0.5mA 4 10 (2) (3) (4) 2 0 0 20 40 60 80 100 120 140 160 0 0 2 4 6 8 10 12 0.1 0.3 1 3 10 Ambient temperature Ta (˚C) Collector to emitter voltage VCE (V) Collector current IC (A) VBE(sat) — IC 100 100000 IC/IB=250 hFE — IC 1000 VCE=3V 300 IC — Lcoil RBE=100Ω TC=25˚C Base to emitter saturation voltage VBE(sat) (V) Forward current transfer ratio hFE 30 10 3 1 0.3 0.1 0.03 0.01 0.01 0.03 30000 TC=100˚C 10000 Collector current IC (A) 25˚C –25˚C 100 30 10 3 1 0.3 0.1 50mJ TC=–25˚C 100˚C 25˚C 3000 1000 300 100 30 10 0.01 0.03 0.1 0.3 1 3 10 0.1 0.3 1 3 10 1 3 10 30 100 300 1000 Collector current IC (A) Collector current IC (A) Load inductance Lcoil (mH) Area of safe operation (ASO) 1000 300 103 Non repetitive pulse TC=25˚C Rth(t) — t (1) Without heat sink (2) With a 100 × 100 × 2mm Al heat sink (1) Thermal resistance Rth(t) (˚C/W) Collector current IC (A) 102 100 30 10 ICP t=1ms 3 IC DC 1 0.3 0.1 1 3 10 30 100 300 1000 10ms 10 (2) 1 10–1 10–2 10–4 10–3 10–2 10–1 1 10 102 103 104 Collector to emitter voltage VCE (V) Time t (s) 2