2SD1330

Transistor 2SD1330 Silicon NPN epitaxial planer type For low-voltage output amplification For muting For DC-DC converter 0.4 Unit: mm 6.9±0.1 1.5 1.5 R0.9 R0.9 2.4±0.2 2.0±0.2 3.5±0.1 2.5±0.1 1.0 1.0 q q q R 0. q s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg (Ta=25˚C) Ratings 25 20 12 1 0.5 600 150 –55 ~ +150 Unit V V V A A mW ˚C ˚C 1:Base 2:Collector 3:Emitter 2.5 2.5 3 2 1 EIAJ:SC–71 M Type Mold Package s Electrical Characteristics Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Collector output capacitance ON resistanse *1h (Ta=25˚C) Symbol ICBO VCBO VCEO VEBO hFE1 hFE2 VCE(sat) VBE(sat) fT Cob Ron*3 *3R on *1 Conditions VCB = 25V, IC = 0 IC = 10µA, IE = 0 IC = 1mA, IB = 0 IE = 10µA, IC = 0 VCE = 2V, IC = 0.5A*2 VCE = 2V, IC = 1A*2 IC = 0.5A, IB = 20mA IC = 0.5A, IB = 50mA VCB = 10V, IE = –50mA, f = 200MHz VCB = 10V, IE = 0, f = 1MHz min typ 1.25±0.05 Low collector to emitter saturation voltage VCE(sat). Low ON resistance Ron. High foward current transfer ratio hFE. M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. 1.0±0.1 0.85 0.55±0.1 0.45±0.05 max 100 4.1±0.2 4.5±0.1 s Features 7 Unit nA V V V 25 20 12 200 60 0.13 0.4 1.2 200 10 1.0 *2 800 V V MHz pF Ω Pulse measurement FE1 Rank classification R 200 ~ 350 S 300 ~ 500 T 400 ~ 800 Measurement circuit 1kΩ Rank hFE1 IB=1mA f=1kHz V=0.3V VB VV VA Ron= VB !1000(Ω) VA–VB 1 Transistor PC — Ta 1000 1.2 IB=4.0mA 800 1.0 Ta=25˚C 3.5mA 3.0mA 0.8 2.5mA 2.0mA 0.6 1.5mA 0.4 1.0mA 0.5mA 0.2 2SD1330 IC — VCE Collector to emitter saturation voltage VCE(sat) (V) 100 30 10 3 1 0.3 0.1 0.03 0.01 0.01 0.03 Ta=75˚C 25˚C –25˚C VCE(sat) — IC IC/IB=25 Collector power dissipation PC (mW) 600 400 200 0 0 20 40 60 80 100 120 140 160 Collector current IC (A) 0 0 1 2 3 4 5 6 0.1 0.3 1 3 10 Ambient temperature Ta (˚C) Collector to emitter voltage VCE (V) Collector current IC (A) VBE(sat) — IC 100 hFE — IC IC/IB=10 1200 VCE=2V 400 fT — I E VCB=10V Ta=25˚C Base to emitter saturation voltage VBE(sat) (V) 1000 Transition frequency fT (MHz) 0.3 1 3 10 30 10 3 25˚C 1 0.3 0.1 0.03 0.01 0.01 0.03 Ta=–25˚C 75˚C Forward current transfer ratio hFE 350 300 250 200 150 100 50 800 Ta=75˚C 600 25˚C –25˚C 400 200 0.1 0.3 1 3 10 0 0.01 0.03 0.1 0 –1 –3 –10 –30 –100 Collector current IC (A) Collector current IC (A) Emitter current IE (A) Cob — VCB 24 Ron — IB IE=0 Ta=25˚C f=1MHz 1000 300 Ron measuring circuit IB=1mA Collector output capacitance Cob (pF) 20 ON resistance Ron (Ω) 100 30 10 3 1 0.3 VB V VA 16 f=1kHz V=0.3V 12 8 4 0 1 3 10 30 100 0.1 0.01 0.03 0.1 0.3 1 3 10 Collector to base voltage VCB (V) Base current IB (mA) 2