2SD1350

Transistor 2SD1350, 2SD1350A Silicon NPN triple diffusion planer type For high breakdown voltage switching s Features q q q q q Unit: mm 2.4±0.2 2.0±0.2 3.5±0.1 High collector to base voltage VCBO. High collector to emitter voltage VCEO. Large collector power dissipation PC. Low collector to emitter saturation voltage VCE(sat). M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. (Ta=25˚C) Ratings 400 600 400 500 5 1 500 1 150 –55 ~ +150 1cm2 Unit V 6.9±0.1 1.5 0.4 2.5±0.1 1.0 1.0 1.5 R0.9 R0.9 1.0±0.1 0.85 Parameter Collector to base voltage Collector to 2SD1350 2SD1350A 2SD1350 Symbol VCBO VCEO VEBO ICP IC PC* Tj Tstg 0.55±0.1 1.25±0.05 0.45±0.05 3 2 1 emitter voltage 2SD1350A Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature * V V A mA W ˚C ˚C 1:Base 2:Collector 3:Emitter 2.5 2.5 EIAJ:SC–71 M Type Mold Package Printed circuit board: Copper foil area of thickness of 1.7mm for the collector portion or more, and the board s Electrical Characteristics Parameter Collector to base voltage Collector to emitter voltage 2SD1350 2SD1350A 2SD1350 2SD1350A (Ta=25˚C) Symbol VCBO VCEO VEBO hFE VCE(sat) VBE(sat) fT Cob ton tf tstg Conditions IC = 100µA, IE = 0 IC = 500µA, IB = 0 IE = 100µA, IC = 0 VCE = 5V, IC = 30mA IC = 250mA, IB = 50mA* IC = 250mA, IB = 50mA* VCB = 30V, IE = –20mA, f = 200MHz VCB = 30V, IE = 0, f = 1MHz VCC = 200V, IC = 100mA IB1 = 10mA, IB2 = –10mA VCC = 200V, IC = 100mA IB1 = 10mA, IB2 = –10mA VCC = 200V, IC = 100mA IB1 = 10mA, IB2 = –10mA 0.4 1.0 0.7 1.0 3.6 4.0 * min 400 600 400 500 5 30 typ max 4.1±0.2 s Absolute Maximum Ratings R 0. 4.5±0.1 7 Unit V V V Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Collector output capacitance Turn-on time 2SD1350 2SD1350A 2SD1350 2SD1350A 2SD1350 2SD1350A 1.5 1.5 55 7 V V MHz pF µs µs µs Fall time Storage time Pulse measurement 1 Transistor PC — Ta 1.6 120 Printed circut board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion. Ta=25˚C 100 2SD1350, 2SD1350A IC — VCE Collector to emitter saturation voltage VCE(sat) (V) 100 30 10 3 1 0.3 0.1 0.03 0.01 1 3 10 30 100 300 1000 Ta=75˚C 25˚C –25˚C VCE(sat) — IC IC/IB=5 Collector power dissipation PC (W) 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 20 Collector current IC (mA) 80 IB=1.0mA 60 0.9mA 0.8mA 0.7mA 0.6mA 0.5mA 0.4mA 0.3mA 0.2mA 0.1mA 0 2 4 6 8 10 12 40 20 0 40 60 80 100 120 140 160 Ambient temperature Ta (˚C) Collector to emitter voltage VCE (V) Collector current IC (mA) VBE(sat) — IC 100 hFE — IC IC/IB=5 120 VCE=5V 60 fT — I E VCB=30V Ta=25˚C Base to emitter saturation voltage VBE(sat) (V) 100 Transition frequency fT (MHz) 100 300 1000 30 10 3 25˚C 1 0.3 0.1 0.03 0.01 1 3 10 30 100 300 1000 Ta=–25˚C 75˚C Forward current transfer ratio hFE 50 80 40 60 Ta=75˚C 25˚C 30 40 –25˚C 20 20 10 0 1 3 10 30 0 – 0.001 – 0.003 – 0.01 – 0.03 – 0.1 – 0.3 –1 Collector current IC (mA) Collector current IC (mA) Emitter current IE (A) Cob — VCB 30 Collector output capacitance Cob (pF) 25 IE=0 f=1MHz Ta=25˚C 20 15 10 5 0 10 30 100 300 1000 Collector to base voltage VCB (V) 2