2SD1385

Transistor 2SD1385 Silicon NPN triple diffusion planer type For low-frequency output amplification Unit: mm 6.9±0.1 2.5±0.1 1.0 1.0 2.4±0.2 2.0±0.2 3.5±0.1 s Features q q q q q 1.5 0.4 1.5 R0.9 R0.9 High collector to base voltage VCBO. High collector to emitter voltage VCEO. Large collector power dissipation PC. Low collector to emitter saturation voltage VCE(sat). M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. 1.0±0.1 R 0. 0.85 0.55±0.1 1.25±0.05 0.45±0.05 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature * (Ta=25˚C) Ratings 400 400 5 200 100 1 150 –55 ~ +150 1cm2 Unit V V V mA mA W ˚C ˚C 3 2 1 Symbol VCBO VCEO VEBO ICP IC PC* Tj Tstg 2.5 2.5 1:Base 2:Collector 3:Emitter EIAJ:SC–71 M Type Mold Package Printed circuit board: Copper foil area of thickness of 1.7mm for the collector portion or more, and the board s Electrical Characteristics Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Collector output capacitance (Ta=25˚C) Symbol VCBO VCEO VEBO hFE VCE(sat) VBE(sat) fT Cob Conditions IC = 100µA, IE = 0 IC = 500µA, IB = 0 IE = 100µA, IC = 0 VCE = 5V, IC = 30mA IC = 50mA, IB = 5mA IC = 50mA, IB = 5mA VCB = 30V, IE = –20mA, f = 200MHz VCB = 30V, IE = 0, f = 1MHz 40 7 min 400 400 5 30 1.5 1.5 V V MHz pF typ max Unit V V V 4.1±0.2 4.5±0.1 7 1 Transistor PC — Ta 1.2 120 Printed circut board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion. Ta=25˚C 100 2SD1385 IC — VCE Collector to emitter saturation voltage VCE(sat) (V) 100 30 10 3 1 25˚C 0.3 –25˚C 0.1 0.03 0.01 0.1 Ta=75˚C VCE(sat) — IC IC/IB=10 Collector power dissipation PC (W) 1.0 0.8 Collector current IC (mA) 80 IB=1.0mA 0.9mA 0.8mA 0.7mA 0.6mA 0.5mA 0.4mA 0.3mA 0.2mA 20 0.1mA 0.6 60 0.4 40 0.2 0 0 40 80 120 160 200 0 0 2 4 6 8 10 12 0.3 1 3 10 30 100 Ambient temperature Ta (˚C) Collector to emitter voltage VCE (V) Collector current IC (mA) VBE(sat) — IC 100 hFE — IC IC/IB=10 12 VCE=5V 60 fT — I E VCB=30V Ta=25˚C Base to emitter saturation voltage VBE(sat) (V) 10 Transition frequency fT (MHz) 20 100 30 10 3 25˚C 1 0.3 0.1 0.03 0.01 0.1 Ta=–25˚C 75˚C Forward current transfer ratio hFE 50 8 40 6 25˚C 4 Ta=75˚C 30 20 2 –25˚C 10 0.3 1 3 10 30 100 0 0.1 30. 1 3 10 0 –1 –3 –10 –30 –100 –300 –1000 Collector current IC (mA) Collector current IC (mA) Emitter current IE (mA) Cob — VCB 12 Collector output capacitance Cob (pF) 10 IE=0 f=1MHz Ta=25˚C 8 6 4 2 0 10 30 100 300 1000 Collector to base voltage VCB (V) 2