2SD1423

Transistor 2SD1423, 2SD1423A Silicon NPN epitaxial planer type For low-frequency amplification Complementary to 2SB1030 and 2SB1030A Unit: mm 4.0±0.2 3.0±0.2 s Features q q s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SD1423 2SD1423A 2SD1423 VCBO VCEO VEBO ICP IC PC Tj Tstg Symbol (Ta=25˚C) 0.7±0.1 2.0±0.2 marking 1 2 3 30 60 25 50 7 1 0.5 300 150 –55 ~ +150 V emitter voltage 2SD1423A Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature V V A A mW ˚C ˚C 1:Emitter 2:Collector 3:Base 1.27 1.27 2.54±0.15 EIAJ:SC–72 New S Type Package s Electrical Characteristics Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage 2SD1423 2SD1423A 2SD1423 2SD1423A (Ta=25˚C) Symbol ICBO ICEO VCBO VCEO VEBO hFE1*1 hFE2 VCE(sat) fT Cob Conditions VCB = 20V, IE = 0 VCE = 20V, IB = 0 IC = 10µA, IE = 0 IC = 2mA, IB = 0 IE = 10µA, IC = 0 VCE = 10V, IC = 150mA*2 VCE = 10V, IC = 500mA*2 IC = 300mA, IB = 30mA*2 VCB = 10V, IE = –50mA, f = 200MHz VCB = 10V, IE = 0, f = 1MHz 200 6 *2 +0.2 0.45–0.1 Ratings Unit 15.6±0.5 Optimum for high-density mounting. Allowing supply with the radial taping. min typ max 0.1 1 Unit µA µA V 30 60 25 50 7 85 40 0.6 340 V V Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Collector output capacitance V MHz 15 pF Pulse measurement *1h FE1 Rank classification Q 85 ~ 170 R 120 ~ 240 S 170 ~ 340 Rank hFE1 1 Transistor PC — Ta 500 1200 Ta=25˚C 1000 2SD1423, 2SD1423A IC — VCE Collector to emitter saturation voltage VCE(sat) (V) 100 30 10 3 1 Ta=75˚C 0.3 0.1 0.03 0.01 0.01 0.03 25˚C –25˚C VCE(sat) — IC IC/IB=10 Collector power dissipation PC (mW) Collector current IC (mA) 400 800 IB=10mA 9mA 8mA 7mA 6mA 5mA 4mA 3mA 2mA 200 1mA 300 600 200 400 100 0 0 20 40 60 80 100 120 140 160 0 0 2 4 6 8 10 12 0.1 0.3 1 3 10 Ambient temperature Ta (˚C) Collector to emitter voltage VCE (V) Collector current IC (A) VBE(sat) — IC 100 hFE — IC IC/IB=10 300 VCE=10V 160 fT — I E VCB=10V Ta=25˚C Base to emitter saturation voltage VBE(sat) (V) 250 Ta=75˚C 200 25˚C –25˚C Transition frequency fT (MHz) 0.3 1 3 10 30 10 3 1 0.3 0.1 0.03 0.01 0.01 0.03 Ta=–25˚C 75˚C Forward current transfer ratio hFE 140 120 100 80 60 40 20 25˚C 150 100 50 0.1 0.3 1 3 10 0 0.01 0.03 0.1 0 – 0.1 – 0.3 –1 –3 –10 –30 –100 Collector current IC (A) Collector current IC (A) Emitter current IE (mA) Cob — VCB 10 Collector output capacitance Cob (pF) IE=0 f=1MHz Ta=25˚C 8 6 4 2 0 1 3 10 30 100 Collector to base voltage VCB (V) 2