2SD1458

Transistor 2SD1458 Silicon NPN epitaxial planer type For low-frequency amplification Unit: mm 6.9±0.1 1.5 0.4 2.5±0.1 1.0 1.0 2.4±0.2 2.0±0.2 3.5±0.1 s Features q q q 1.5 R0.9 R0.9 0.85 0.55±0.1 0.45±0.05 1.25±0.05 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature * (Ta=25˚C) 3 2 1 Symbol VCBO VCEO VEBO ICP IC PC* Tj Tstg Ratings 20 20 15 1.5 0.7 1 150 –55 ~ +150 1cm2 Unit V V V A A W ˚C ˚C 1:Base 2:Collector 3:Emitter EIAJ:SC–71 M Type Mold Package 2.5 2.5 Printed circuit board: Copper foil area of thickness of 1.7mm for the collector portion or more, and the board s Electrical Characteristics Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Collector output capacitance (Ta=25˚C) Symbol ICBO ICEO VCBO VCEO VEBO hFE VCE(sat) fT Cob Conditions VCB = 15V, IE = 0 VCE = 15V, IB = 0 IC = 10µA, IE = 0 IC = 1mA, IB = 0 IE = 10µA, IC = 0 VCE = 10V, IC = 150mA* IC = 500mA, IB = 50mA* VCB = 20V, IE = –20mA, f = 200MHz VCB = 10V, IE = 0, f = 1MHz 55 11 *2 min typ max 1 10 20 20 15 1000 2500 0.4 4.1±0.2 High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. 1.0±0.1 R 0. 4.5±0.1 7 Unit µA µA V V V V MHz 15 pF Pulse measurement 1 Transistor PC — Ta 1.2 240 Printed circut board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion. Ta=25˚C 200 2.0 IB=100µA 90µA 80µA 70µA 60µA 50µA 80 40µA 30µA 40 20µA 10µA 0 0 40 80 120 160 200 0 0 2 4 6 8 10 0 0 0.4 0.8 2SD1458 IC — VCE 2.4 VCE=10V IC — VBE Collector power dissipation PC (W) 1.0 Collector current IC (mA) 0.8 160 Collector current IC (A) 1.6 25˚C Ta=75˚C –25˚C 0.6 120 1.2 0.4 0.8 0.2 0.4 1.2 1.6 2.0 Ambient temperature Ta (˚C) Collector to emitter voltage VCE (V) Base to emitter voltage VBE (V) VCE(sat) — IC Collector to emitter saturation voltage VCE(sat) (V) 100 30 10 3 1 0.3 0.1 0.03 0.01 0.01 0.03 Ta=75˚C 25˚C –25˚C IC/IB=10 3000 hFE — IC 300 VCE=10V fT — I E VCB=10V Ta=25˚C Forward current transfer ratio hFE 2500 Ta=75˚C 25˚C –25˚C Transition frequency fT (MHz) 0.3 1 3 10 250 2000 200 1500 150 1000 100 500 50 0.1 0.3 1 3 10 0 0.01 0.03 0.1 0 –1 –3 –10 –30 –100 –300 –1000 Collector current IC (A) Collector current IC (A) Emitter current IE (mA) Cob — VCB 24 Collector output capacitance Cob (pF) 20 IE=0 f=1MHz Ta=25˚C 16 12 8 4 0 1 3 10 30 100 Collector to base voltage VCB (V) 2